Abstract:Delafossite CuFeO2 is a p-type oxide semiconductor with a band gap of ∼1.5 eV, which has attracted great interests for applications in solar energy harvesting and oxide electronics. However, there are still some discrepancies in the literature regarding its fundamental electronic structure and transport properties. In this paper, we use a synergistic combination of resonant photoemission spectroscopy and X-ray absorption spectroscopy to directly study the electronic structure of well-defined CuFeO2 epitaxial thin films. Our detailed study reveals that CuFeO2 has an indirect and d–d forbidden band gap of 1.5 eV. The top of the valence band (VB) of CuFeO2 mainly consists of occupied Fe 3d states hybridized with Cu 3d and O 2p, and the bottom of the conduction band (CB) is primarily made up of unoccupied Fe 3d states. The localized nature of the Fe 3d states at both CB and VB edges would limit the carrier mobility and the dynamics of photoexcited carriers. In addition, Mg doping at Fe sites in CuFeO2 increases the hole carrier concentration and leads to a gradual shift of the Fermi level toward the VB. These insights into its electronic structure are of fundamental importance for rational designing and improving the performance of CuFeO2 as photocatalysts.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00090?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00090</a>.Film morphology and thickness of CuFeO2 were examined by tapping-mode AFM and SEM; Cu LMM spectra of CuFeO2 and standard samples of Cu2O (green), CuO (black), and Cu (gray) from reference; VB spectra excited with photon energies of 705 eV, 709 eV, and 710.5 eV; XRD pattern of CuFeO2, 0.2%, 1%, 3%, and 5% Mg-doped CuFeO2 epitaxial thin films; AFM images of 0.2% Mg-CuFeO2 film (RSM = 7.97 nm), 1% Mg-CuFeO2 film (RSM = 9.52 nm), 3% Mg-CuFeO2 film (RSM = 10.10 nm), and 5% Mg-CuFeO2 film (RSM = 12.58 nm); absorption coefficient of Mg-doped CuFeO2 thin films as a function of photon energy; and Cu 2p3/2 and O 1s spectra of CuFeO2 films with various Mg contents (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00090/suppl_file/el1c00090_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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