Abstract:Metallicity/chirality‐pure single‐walled carbon nanotubes (SWCNTs) are promising materials for realizing post‐silicon electronics. Molecular doping is emerging as the primary doping approach for the structure‐controlled SWCNTs, enabling their eventual use in various devices. This review introduces the underlying physical process of molecular doping of SWCNTs, dopant materials, and doping effects in devices, and also discusses challenges and opportunities in this field. Single‐walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post‐silicon electronics. Molecular doping, with its non‐destructive and fine‐tunable characteristics, is emerging as the primary doping approach for the structure‐controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure‐controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure‐sorting strategies leads to significantly improved functionality of SWCNT‐based field‐effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.

Modulated chemical doping of individual carbon nanotubes

Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes

Controllable p and n doping of single-walled carbon nanotubes by encapsulation of organic molecules and fullerene: A theoretical investigation

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Nitrogen doping of metallic single-walled carbon nanotubes: n-type conduction and dipole scattering

Molecular Doping Modulation and Applications of Structure‐Sorted Single‐Walled Carbon Nanotubes: A Review

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Amphoteric and Controllable Doping of Carbon Nanotubes by Encapsulation of Organic and Organometallic Molecules

Selective tuning of the electronic properties of coaxial nanocables through exohedral doping

Adjustable Hydrazine Modulation of Single-Wall Carbon Nanotube Network Field Effect Transistors from P-Type to N-Type

Modulation‐Doped Multiple Quantum Wells of Aligned Single‐Wall Carbon Nanotubes

Doping of zigzag carbon nanotubes through the encapsulation of small fullerenes

Converting Metallic Single-Walled Carbon Nanotubes into Semiconductors by Boron/Nitrogen Co-Doping

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Defining and controlling double quantum dots in single-walled carbon nanotubes

Unusual Electrical Conductivity Enhancement in Stable n-Type Carbon Nanotube Networks

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

A Doping-Free Approach to Carbon Nanotube Electronics and Optoelectronics

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Doping Mechanism in Single-Wall Carbon Nanotubes Studied by Optical Absorption