Abstract:We show that quantum confinement in the valence and conduction bands of semiconducting single-walled carbon nanotubes can be engineered by means of artificial defects. This ability holds potential for designing future nanotube-based quantum devices such as electrically driven room-temperature single-photon sources emitting at telecom-wavelength. Using Ar$^{+}$ and N$^{+}$ ion-induced defects, intrananotube quantum dots with sub-10 nm lateral sizes are created, giving rise to quantized electronic bound states with level spacings of the order of 100 meV and larger. Using low-temperature scanning tunneling spectroscopy, we resolve the energy and real space properties of the quantized states and compare them with theoretical model calculations. By solving the Schrödinger equation over a one-dimensional piecewise constant potential model, the effects of inhomogeneous defect scattering strength as well as surface variations in the Au(111) substrate on the quantized states structure are remarkably well reproduced. Furthermore, using ab-initio calculations, we demonstrate that defect structures such as vacancies, di-vacancies and chemisorbed nitrogen ad-atoms constitute strong scattering centers able to form quantum dots with clear signatures of discrete bound states as observed experimentally. The ab-initio simulations also allowed to study the scattering strength profile as a function of energy for different defect combinations, supporting the potential of highly stable double vacancies for practical applications at room temperature.

Defining and controlling double quantum dots in single-walled carbon nanotubes

Single wall carbon nanotube double quantum dot

Gate-Defined Quantum Dots on Carbon Nanotubes

A triple quantum dot in a single wall carbon nanotube

Molecular states in carbon nanotube double quantum dots

Carbon Nanotube Devices for Quantum Technology

Excited State Spectroscopy in Carbon Nanotube Double Quantum Dots

Tunable few-electron double quantum dots and Klein tunnelling in ultra-clean carbon nanotubes

Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots

Parallel carbon nanotube quantum dots and their interactions

Top-gate defined double quantum dots in InAs nanowires

Quantized Charge Pumping through a Carbon Nanotube Double Quantum Dot

Full characterization of a carbon nanotube parallel double quantum dot

Double Quantum Dots in Carbon Nanotubes

Gate-defined graphene double quantum dot and excited state spectroscopy

Double Quantum Dots in Atomically-Precise Graphene Nanoribbons

Novel Nanotube Multiquantum Dot Devices

Transport in coupled graphene-nanotube quantum devices

Controllable Tunnel Coupling and Molecular States in a Graphene Double Quantum Dot

Transport Through A Gate Tunable Graphene Double Quantum Dot

Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube P-N Junction.