Abstract:We show that quantum confinement in the valence and conduction bands of semiconducting single-walled carbon nanotubes can be engineered by means of artificial defects. This ability holds potential for designing future nanotube-based quantum devices such as electrically driven room-temperature single-photon sources emitting at telecom-wavelength. Using Ar$^{+}$ and N$^{+}$ ion-induced defects, intrananotube quantum dots with sub-10 nm lateral sizes are created, giving rise to quantized electronic bound states with level spacings of the order of 100 meV and larger. Using low-temperature scanning tunneling spectroscopy, we resolve the energy and real space properties of the quantized states and compare them with theoretical model calculations. By solving the Schrödinger equation over a one-dimensional piecewise constant potential model, the effects of inhomogeneous defect scattering strength as well as surface variations in the Au(111) substrate on the quantized states structure are remarkably well reproduced. Furthermore, using ab-initio calculations, we demonstrate that defect structures such as vacancies, di-vacancies and chemisorbed nitrogen ad-atoms constitute strong scattering centers able to form quantum dots with clear signatures of discrete bound states as observed experimentally. The ab-initio simulations also allowed to study the scattering strength profile as a function of energy for different defect combinations, supporting the potential of highly stable double vacancies for practical applications at room temperature.

A triple quantum dot in a single wall carbon nanotube

Single wall carbon nanotube double quantum dot

Defining and controlling double quantum dots in single-walled carbon nanotubes

Parallel carbon nanotube quantum dots and their interactions

A triangular triple quantum dot with tunable tunnel couplings

Gate-Defined Quantum Dots on Carbon Nanotubes

Molecular states in carbon nanotube double quantum dots

Novel Nanotube Multiquantum Dot Devices

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

Single to quadruple quantum dots with tunable tunnel couplings

Full characterization of a carbon nanotube parallel double quantum dot

Quantized Charge Pumping through a Carbon Nanotube Double Quantum Dot

Double Quantum Dots in Carbon Nanotubes

Tunable few-electron double quantum dots and Klein tunnelling in ultra-clean carbon nanotubes

Excited State Spectroscopy in Carbon Nanotube Double Quantum Dots

Real Time Electron Tunneling and Pulse Spectroscopy in Carbon Nanotube Quantum Dots

Charge sensing in carbon nanotube quantum dots on microsecond timescales

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots

Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots

Tunable Hybrid Qubit in a Triple Quantum Dot