Scalable 1xN switch via on-chip tunable metasurface

Liu Yingjie,Wang Xi,Yao Yong,Du Jiangbing,Song Qinghai,Xu Ke

2021-01-01

Abstract:An integrated 1xN switch is proposed and experimentally demonstrated via tunable silicon photonic metasurface which has an insertion loss of 3 dB and extinction ratio of 5 dB in the C band. (c) 2021 The Author(s)

What problem does this paper attempt to address?

Scalable 1×N Switch Via On-Chip Tunable Metasurface

Yingjie Liu,Xi Wang,Yong Yao,Jiangbing Du,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ofc.2021.th4e.7

2021-01-01

Abstract:An integrated 1×N switch is proposed and experimentally demonstrated via tunable silicon photonic metasurface which has an insertion loss of 3 dB and extinction ratio of 5 dB in the C band.
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
Scalable 3D Silicon Optical Switch Based on CLOS Architecture

Yuexin Yin,Chunlei Sun,Yingzhi Ding,Xinru Xu,Mengke Yao,Lan Li,Hongtao Lin,Daming Zhang

DOI: https://doi.org/10.1109/JPHOT.2022.3195893

IF: 2.4

2022-01-01

IEEE Photonics Journal

Abstract:To achieve complex functionality with small size, weight and power, photonic integrated circuits (PIC) are expanded from two-dimensional (2D) to three-dimensional (3D). In this paper, a new design for a scalable 3D silicon optical switch is proposed. Key elements, including silicon electro-optic switches, crossings, and interlayer transitions are used to define and optimize the 3D optical switching network. The architecture is based on CLOS architecture, which can be extended to multiple layers. Silicon-based two- and three-layer switches are carefully designed and analyzed as an example based on the transfer matrix technique (TMT). In a 4×4 two-layer optical switch, the average insertion loss at 1550 nm wavelength is ∼4.16 dB, and ∼3.69 dB for the “all-cross” and “all-bar” states, respectively. In a 4×4 three-layer optical switch, the average insertion loss at 1550 nm wavelength is ∼5.96 dB, and ∼5.41 dB for the “all-cross” and “all-bar” states, respectively. The architecture also shows the scalability of both the port number and the layer number. The scalable 3D architecture proposed could improve the interconnect density twice and thrice in a single-layer design.
Scalable 1xN switch using optical phased array

Zhen Li,Yu Yu,Xinliang Zhang

2020-01-01

Abstract:A scalable silicon optical switch utilizing the beam steering feature of an optical phased array is proposed and experimentally demonstrated, with high output-count and large extinction ratio. The 1x5 switch is fabricated and characterized. (C) 2020 The Author(s)
A non-silicon micro-machining based scalable fiber optic switch

Junfeng Bao,Zhonghui Cao,Ye Yuan,X. Wu

DOI: https://doi.org/10.1016/j.sna.2004.04.014

2004-01-01

Abstract:We report a low-cost non-silicon-based fiber optic switch featuring a novel design of reflection cell, which is capable of ±5V pulse operation and self-latching. The switch prototypes were measured to have a switch time of 2.6ms, return loss of −54dB and a low insertion loss. Enabling technology is precision electrical discharge machining. The dynamic process of switching was analyzed using an FEA software ANSYS for design optimization. A reasonable agreement was obtained between the measurement and calculated results. The switch is scalable to 8×8 or above and allows the realization of high capacity cross-connects.
Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

Tao Chu,Nuo Chen,Weijie Tang,Yating Wu

DOI: https://doi.org/10.1364/OFC.2023.M4J.6

2023-01-01

Abstract:Large-scale high-speed photonic switches were demonstrated on silicon-on-insulator and thin-film Lithium Niobate platforms, respectively. Ultra-low-loss spot-size-converter, grating coupler, waveguide crossing, and high-speed switch unit are developed, as well as an integrated 128 x 128 switch.
1 x N (N=2, 8) Silicon Selector Switch for Prospective Technologies at the 2 m Waveband

Jia Xu Brian Sia,Xiang Li,Zhongliang Qiao,Xin Guo,Jin Zhou,Callum G. Littlejohns,Chongyang Liu,Graham T. Reed,Wanjun Wang,Hong Wang

DOI: https://doi.org/10.1109/LPT.2020.3014204

IF: 2.6

2020-01-01

IEEE Photonics Technology Letters

Abstract:The 2 mu m waveband, specifically near 1.9 mu m, is an imperative resource that could possibly be exploited in future communications systems. This is due to the promising infrastructural developments at the wavelength region (hollow-core photonic bandgap fiber, thulium-doped fiber amplifier) near 1.9 mu m. In this work, we report the 1 x N selector switch based on Mach-Zehnder interferometers operating near the 1.9 mu m wavelength region. As an elementary cell ( N = 2), an insertion loss as low as 1.1 dB, P-pi of 23 mW, 10-90% switching time of lower than 38 mu s and a crosstalk of lower than -25 dB from 1880 to 1955 nm has been determined. In order to prove scalability, the 1 x 8 switch ( N = 8) is demonstrated, indicating crosstalk as low as -21 dB, considering all possible switching configurations across the abovementioned wavelength region. Insertion loss levels are examined.
Scalable 1 × N switch using optical phased array

Zhen Li,Yu Yu,Xinliang Zhang

DOI: https://doi.org/10.1364/acpc.2020.m4a.170

2020-01-01

Abstract:A scalable silicon optical switch utilizing the beam steering feature of an optical phased array is proposed and experimentally demonstrated, with high output-count and large extinction ratio. The 1x5 switch is fabricated and characterized. © 2020 The Author(s)
A CMOS Compatible 1&#x00d7;3 Optical Switch Based on Silicon on Insulator

Wanjun Wang,Yong Zhao,Yubo Li,Yinlei Hao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/group4.2010.5643379

2010-01-01

Abstract:A 1×3 optical switch is demonstrated utilizing the 0.8-μm standard CMOS technology. Extinction ratios higher than 21dB are obtained for three states. It is with low power consumption (~7.4mW) and switching time (~15.3ns).
Low-voltage Micromachining-Based Scalable Optical Switch

JF Bao,Y Yuan,ZH Cao,X Wu

DOI: https://doi.org/10.1117/12.483176

2002-01-01

Abstract:We report a fiber optic switch based on a novel MEMS technology allowing fast switch (<2 ms), excellent isolation (>50dB) and wide bandwidth. Each switch module consists of an electromagnetically actuated gold-coated silicon mirror rotating around a 100 mum diameter shaft and a miniature 5V driven coil. Enabling technology is precision EDM machining and laser cutting. The switch is scalable to 8 X 8 and allows the realization of high capacity cross-connects.
Design of a Flexible-Grid 1 × 2 Wavelength-Selective Switch Using Silicon Microring Resonators

Pengjun Wang,Tianjun Yang,Tingge Dai,Gencheng Wang,Jie Zhang,Weiwei Chen,Jianyi Yang

DOI: https://doi.org/10.1109/jphot.2017.2772928

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, a compact integrated flexible-grid 1 × 2 wavelength-selective switch is proposed. The device is designed by utilizing a structure with nine reconfigurable add-drop silicon microring resonators. Using thermal tuning, the transmission spectra of silicon microring resonators are coherently combined to provide adjustable bandwidths as desired. The operation principle and detailed analysis of the designed device are presented. Calculation results show the bandwidth tuning for the spectrum with the large bandwidth varies from 0.56 to 4.09 nm and the bandwidth tuning for the spectrum with the moderate bandwidth ranges from 0.38 to 2.64 nm. The integrated flexible-grid 1 × 2 wavelength-selective switch with the maximum bandwidth tunability has a maximum crosstalk of -11.5 dB.
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Wanjun Wang,Yong Zhao,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/acpc.2012.as3b.4

2012-01-01

Abstract:In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch.
Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Wanjun Wang,Haifeng Zhou,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/OL.37.002307

IF: 3.6

2012-01-01

Optics Letters

Abstract:We report on an experimental 3 x 3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1 x N and N x N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3 x 3 switching functionality is demonstrated at a wavelength of 1.55 mu m, with an average cross talk of -11.1 dB and a power consumption of 97.5 mW. (C) 2012 Optical Society of America
Flexible-Grid Wavelength-Selective Switch Based on Silicon Microring Resonators with Interferometric Couplers

Weiwei Chen,Tianjun Yang,Pengjun Wang,Jie Zhang,Qiang Fu,Hao Lu,Bohao Zhang,Tingge Dai,Gencheng Wang,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1109/jlt.2018.2839665

IF: 4.7

2018-01-01

Journal of Lightwave Technology

Abstract:In this paper, a kind of integrated flexible-grid wavelength-selective switch composed of reconfigurable add-drop silicon microring resonators with interferometric couplers is described in detail. Owing to tunable interferometric couplers, the proposed device is capable of realizing an increase in adjustable channel spacing for a given field coupling coefficient. By carefully controlling the path phase differences and tunable interferometric couplers, the transmission spectra of adjacent channels can be selectively combined to form adjustable bandwidths as desired. As an example, an integrated flexible-grid 1 x 2 wavelength-selective switch is designed and theoretically analyzed. The channel spacing can increase from 0.1 to 0.8 nm. When the channel spacing is selected to be 0.8 nm, the bandwidth varies from 0.36 to 2.91 nm and a minimum extinction ratio of 14.8 dB is obtained.
On-Chip Router Elements Based on Silicon Hybrid Plasmonic Waveguide

Zhiqiang Ge,Lingxuan Zhang,Guoxi Wang,Wenfu Zhang,Mulong Liu,Siqi Li,Leiran Wang,Qibing Sun,Wenzhen Ren,Jinhai Si,Wei Zhao

DOI: https://doi.org/10.1109/lpt.2017.2695081

IF: 2.6

2017-01-01

IEEE Photonics Technology Letters

Abstract:We have proposed and investigated micro-ring add-drop switch and M-Z interferometric element for on-chip router applications based on silicon hybrid plasmonic waveguide. The proposed silicon hybrid plasmonic waveguide possesses lower propagation loss compared with conventional plasmonic metal-insulator-metal waveguide. By employing this low loss waveguide, it is found that the proposed ring add-drop switch possesses high transmission efficiency (-1 dB), and the extinction ratio can be as high as 30 dB at 1.556 mu m. In addition, the transmission efficiency of drop port for the M-Z interferometric element can be -1.15 dB at 1.55 mu m. The designed elements are essential for the on-chip router in optical interconnect.
Broadband 32 X 32 Strictly-Nonblocking Optical Switch on a Multi-Layer Si3N4-on-SOI Platform

Wei Gao,Xin Li,Liangjun Lu,Chenghan Liu,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1002/lpor.202300275

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Large-scale silicon optical switches are essential to support the ever-increasing data traffic. Among the various switching architectures, the well-known switch-and-select (S&S) architecture has the advantages of low crosstalk and strict non-blocking. However, it suffers from high path-dependent losses as the waveguide crossings increase dramatically with the number of ports. In this paper, a large-scale 32 x 32 S&S optical switch on a multi-layer Si3N4-on-SOI platform is reported. The optical switch chip incorporates 1984 broadband thermo-optic Mach-Zehnder interferometer (MZI)-based switch elements, 246 016 three-dimensional (3D) waveguide crossings, and 2048 interlayer couplers. Both approximate to 1-mdB-loss 3D waveguide crossings and approximate to 0.3-dB-loss interlayer couplers are realized, significantly reducing the overall insertion loss and footprint of the switch chip. The measured average fiber-to-fiber insertion loss is 12.88 dB at the 1580 nm wavelength. In addition, the crosstalk is less than -20.7 dB over the 110-nm wavelength range. The power consumption of the entire switch chip is only approximate to 0.98 W due to the air trenches and substrate undercut. High-fidelity optical transmission of a 50 Gb s(-1) quadrature phase-shift keying signal verifies the high-performance routing capability of this chip. These results indicate that the large-scale optical switch with broadband, low crosstalk, and high-power efficiency is promising for datacenter optical network applications.
Broadband, Low-Crosstalk and Power-Efficient 32x32 Optical Switch on a Dual-Layer Si3N4-on-SOI Platform

Wei Gao,Xin Li,Liangjun Lu,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/ofc.2022.w4b.4

2022-01-01

Abstract:We demonstrate a 32 x 32 optical switch on a dual-layer Si3N4-on-SOI platform with low fiber-to-fiber insertion loss (9.61 similar to 44.51 dB), low crosstalk (similar to-35 dB), broad 3-dB bandwidth (similar to 57 nm) and low power consumption (similar to 0.83 W). (C) 2022 The Author(s)
Dilated space-and-wavelength selective crosspoint optical switch

Ziyao Zhang,Minjia Chen,Rui Ma,Bohao Sun,Adrian Wonfor,Richard Penty,Qixiang Cheng

2024-10-08

Abstract:Photonic integrated switches that are both space and wavelength selective are a highly promising technology for data-intensive applications as they benefit from multi-dimensional manipulation of optical signals. However, scaling these switches normally poses stringent challenges such as increased fabrication complexity and control difficulties, due to the growing number of switching elements. In this work, we propose a novel dilated crosspoint topology, which efficiently handles both space and wavelength selective switching, while reducing the required switching element count by an order of magnitude compared to reported designs. To the best of our knowledge, our design requires the fewest switching elements for an equivalent routing paths number and it fully cancels the first-order in-band crosstalk. We demonstrate such an ultra-compact space-and-wavelength-selective switch (SWSS) at a scale of 4{\times}4{\times}4{\lambda} on the silicon-on-insulator (SOI) platform. Experimental results reveal that the switch achieves an insertion loss ranging from 2.3 dB to 8.6 dB and crosstalk levels in between -35.3 dB and -59.7 dB. The add-drop microring-resonators (MRRs) are equipped with micro-heaters, exhibiting a rise and fall time of 46 {\mu}s and 0.33 {\mu}s, respectively. These performance characteristics highlight the switch's ultra-low element count and crosstalk with low insertion loss, making it a promising candidate for advanced data center applications.

Optics,Applied Physics
Inverse‐Designed Integrated Nonlinear Optical Switches

Hao Chen,Jiatong Li,Zhenyuan Shang,Guoqing Wang,Ziming Zhang,Zexing Zhao,Mengyu Zhang,Jinde Yin,Jinzhang Wang,Kai Guo,Junbo Yang,Peiguang Yan

DOI: https://doi.org/10.1002/lpor.202200254

2022-01-01

LASER & PHOTONICS REVIEWS

Abstract:Due to the slowdown of Moore's law, the integrated photonic devices have provided a route to promote the development of large-scale optical communications with high performance. As one of the essential components of optical routers, an optical switch can fast transmit or block the optical signal. However, most of the integrated optical switches reported to date rely on thermo-, magneto-, or electro-optical effects, which limit applications due to slow response times, large footprint, and complexity fabrication. Here, an integrated nonlinear optical switch designed by the inverse-design method and fabricated on the SiN platform is introduced. The integrated optical switch is demonstrated with significant intensity-dependent transmission at 1.5 mu m waveband. The polarization-depended capability is explored by using fundamental polarized lights (transverse electric and transverse magnetic, respectively), which exhibits opposite transmission change trends during the whole power range and opens potential applications such as photonic quantum information processing. In order to address the saturation of Kerr-nonlinearity in SiN materials at high power, a MoS2/SiN hybrid integrated optical switch is fabricated by uniformly cladding few-layer MoS2 on the surface of inverse-designed region. That is demonstrated to enhance the nonlinear optical response of device efficiently and achieve more excellent switching capability at high power.

Scalable 1xN switch via on-chip tunable metasurface

Scalable 1×N Switch Via On-Chip Tunable Metasurface

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

Scalable 3D Silicon Optical Switch Based on CLOS Architecture

Scalable 1xN switch using optical phased array

A non-silicon micro-machining based scalable fiber optic switch

Large-Scale High-Speed Photonic Switches Fabricated on Silicon-Based Photonic Platforms

1 x N (N=2, 8) Silicon Selector Switch for Prospective Technologies at the 2 m Waveband

Scalable 1 × N switch using optical phased array

A CMOS Compatible 1&amp;#x00d7;3 Optical Switch Based on Silicon on Insulator

Low-voltage Micromachining-Based Scalable Optical Switch

Design of a Flexible-Grid 1 × 2 Wavelength-Selective Switch Using Silicon Microring Resonators

High-speed compact silicon digital optical switch with slot structure

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Flexible-Grid Wavelength-Selective Switch Based on Silicon Microring Resonators with Interferometric Couplers

On-Chip Router Elements Based on Silicon Hybrid Plasmonic Waveguide

Broadband 32 X 32 Strictly-Nonblocking Optical Switch on a Multi-Layer Si3N4-on-SOI Platform

Broadband, Low-Crosstalk and Power-Efficient 32x32 Optical Switch on a Dual-Layer Si3N4-on-SOI Platform

Dilated space-and-wavelength selective crosspoint optical switch

Inverse‐Designed Integrated Nonlinear Optical Switches

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

A CMOS Compatible 1×3 Optical Switch Based on Silicon on Insulator