Monolayer MoS 2 Synaptic Transistors for High-Temperature Neuromorphic Applications
Bolun Wang,Xuewen Wang,Enze Wang,Chenyu Li,Ruixuan Peng,Yonghuang Wu,Zeqin Xin,Yufei Sun,Jing Guo,Shoushan Fan,Chen Wang,Jianshi Tang,Kai Liu
DOI: https://doi.org/10.1021/acs.nanolett.1c03684
IF: 10.8
2021-12-06
Nano Letters
Abstract:As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS<sub>2</sub> as the channel and Na<sup>+</sup>-diffused SiO<sub>2</sub> as the ionic gate medium. A large on/off ratio of 10<sup>6</sup> can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS<sub>2</sub> transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology