Formation Mechanism of ZrC-SiC Joint Prepared by Pulsed-Current Assisted Diffusion Bonding

Jincheng Lin,Yao Chen,Qi Wang,Decai Ma,Lili Xing,Panpan Lin,Peng He,Weiqi Yang,Tiesong Lin

DOI: https://doi.org/10.1016/j.ceramint.2024.11.276

IF: 5.532

2024-01-01

Ceramics International

Abstract:For pulsed-current assisted diffusion bonding of ZrC-SiC composite, the required joining temperature and joint formation mechanism showed great difference with grain-size. Compared to base-materials with a grain-size of 3-5 μm (m-ZS), the joining temperature of n-ZS (grain-size ∼1 μm) could be reduced by 100 °C while maintaining the same joint efficiency. Moreover, the straight bond-line of m-ZS joint was eliminated by strain-induced grain-boundary migration, but causing by the straight interface due to the pining effect of interfacial SiC, shear strength of the joint bonded at 1700 °C is only 81.7% of substrate. In contrast, pulsed-current enhanced the vaporization-deposition mechanism in n-ZS joint, resulting in massive formation of nano-scale ZrC particles at interface. At 1700 °C, the cross-interface growth of nano-particles contributed a seamless joining, and the joint microstructure and shear strength are consistent with those of the base-materials.