Abstract:The structure studied here consisting of a Hf0.5Zr0.5O2 (HZO) epitaxial film and an yttria‐stabilized zirconia (YSZ) substrate demonstrates polymorph‐selective and fully‐coherent growth of hafnia films with high crystal quality. Besides, the thermally‐activated oxygen conductivity of the substrate enables the ferroelectric switching in the orthorhombic film. This constitutes an ion‐driven electronic effect, and supports the relationship between ferroelectricity and oxygen mobility. Films of ferroelectric hafnia have hitherto been deposited on electrodes with a non‐fluorite crystal structure. As a result, they are polycrystalline, contain fractions of non‐ferroelectric polymorphs or have poor crystal quality. Here, a strategy that circumvents all these limitations is shown. Seven nanometers‐thick epitaxial Hf0.5Zr0.5O2 (HZO) films are deposited directly on yttria‐stabilized zirconia (YSZ) single‐crystals. The fluorite structure of the whole system enables coherent epitaxy, while the substrate orientation induces polymorph‐selective growth, being the HZO films orthorhombic on YSZ(111) and monoclinic on YSZ(001). Besides, the YSZ substrate can play the role of a buried floating electrode under the appropriate measuring conditions (temperature and frequency) thanks to its thermally‐activated oxygen conductivity. Indeed, out‐of‐plane ferroelectric switching is confirmed in the orthorhombic HZO samples at 185 °C and 0.01 Hz frequency. This original approach avoids the need to deposit conducting bottom layers, allowing high‐quality orthorhombic hafnia to be obtained directly on the substrate and its ferroelectric nature to be studied. Moreover, it constitutes a case of ion‐driven ferroelectric switching, and thus gives support to the recently proposed relationship between ionic conductivity, and ferroelectricity in fluorite systems.

Coherent Epitaxy of HfxZr1-xO2 Thin Films by High-pressure Magnetron Sputtering

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 with Metallic Pyrochlore Oxide Electrodes

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Stabilization of Ferroelectric Hf0.5Zr0.5O2 Epitaxial Films via Monolayer Reconstruction Driven by Interfacial Redox Reaction

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Epitaxy‐Driven Ferroelectric/Non‐Ferroelectric Polymorph Selection in an All‐Fluorite System

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films