A 115-140Ghz Power Amplifier with High Output Power in SiGe BiCMOS

Peng Yang,Zhe Chen,Zongxiang Wang,Yue Qi,Pinqing Wang,Peigen Zhou,Lin Peng,PinPin Yan,Jixin Chen,Wei Hong
DOI: https://doi.org/10.1109/iws61525.2024.10713622
2024-01-01
Abstract:This paper presents a power amplifier (PA) operating in the frequency range of 115-140 GHz, implemented using a 0.13 μm germanium-silicon (SiGe) BiCMOS process. The single stage amplifier employs a cascode structure and integrates gmboosting technology to enhance gain. To ensure superior broadband performance at high frequencies, input and output matching are achieved through the utilization of a Marchand balun. The PA operates from 115 GHz to 140 GHz (3dB bandwidth) with a peak gain of 23.7 dB at 130GHz. At 116 GHz, the amplifier achieves a saturated output power of 16.2 dBm, with the peak power added efficiency (PAE) of 10.2%. The total chip size is 0.92×0.73 mm 2 .
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