Abstract:Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

GaN Surface Acoustic Wave Resonaters on Si Substrate for RF Applications

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Investigation of Surface Acoustic Wave Characteristics in Gallium Nitride Thin Film Grown on Sapphire

Geometry Characteristics and Wide Temperature Behavior of Silicon-Based GaN Surface Acoustic Wave Resonators with Ultrahigh Quality Factor

Fabrication and Characterization of One-Port Surface Acoustic Wave Resonators on Semi-Insulating GaN Substrates*

Single-mode and Ultra-Broadband Gigahertz Surface Acoustic Waveguides on AlN-on-SiC Substrates

Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices

Surface Acoustic Wave Devices Using Lithium Niobate on Silicon Carbide

Surface acoustic wave resonators based on (002)AlN/Pt/diamond/silicon layered structure

Surface Acoustic Wave Resonators Using Lithium Niobate on Silicon Carbide Platform

Enhanced Performance of 17.7 GHz SAW Devices Based on AlN/diamond/Si Layered Structure with Embedded Nanotransducer

Near 6 GHz Sezawa Mode Surface Acoustic Wave Resonators using AlScN on SiC

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Design and Fabrication of an Surface Acoustic Wave Resonator Based on AlN/4H-SiC Material for Harsh Environments

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices

The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures.

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures

Impact of Device Parameters on Performance of One-Port Type SAW Resonators on AlN/sapphire