Abstract:3R‐MoS2 based solid mounted resonators with the resonant frequency up to 27 GHz and the electromechanical coupling coefficient ≈47.6% are demonstrated. Successful implantation of 2D piezoelectric 3R‐MoS2 flakes into acoustic resonators suggests that ultrathin 2D piezoelectric nanoflakes can break through the frequency limitation of conventional acoustic resonators. 2D piezoelectric materials can be promising for next generation acoustic devices. Conventional bulk and thin piezoelectric materials based film bulk acoustic resonators (FBARs) are facing an insurmountable challenge for millimetric frequency applications due to the poor piezoelectric properties of the materials when their thickness reaches the sub‐micron regime. Novel FBARs for ultra‐high working frequencies are in urgent demand to meet the requirements of the fast‐growing 5/6G telecommunication techniques. Recent advances in 2D piezoelectric nanomaterials create an opportunity in this perspective. Here, the first FBAR chip based on 2D 3R‐MoS2 ultrathin piezoelectric flakes with a solidly mounted resonator (SMR) architecture is reported. The typical resonant frequency for an SMR device based on ≈200 nm 3R‐MoS2 flake reaches over 25 GHz with high reproducibility. Theoretical and finite element analysis suggest that the observed resonance is of longitudinal acoustic modes. This study demonstrates for the first time that the access to 2D piezoelectric nanomaterials makes high performance piezoelectric devices feasible for various promising applications including high‐speed telecommunication, acousto‐optic, and sensor fields,etc.

High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices

Gallium nitride phononic integrated circuits for future RF front-ends

High-frequency traveling-wave phononic cavity with sub-micron wavelength

GaN Micromechanical Resonators with Meshed Metal Bottom Electrode

Investigation of Surface Acoustic Wave Characteristics in Gallium Nitride Thin Film Grown on Sapphire

Geometry Characteristics and Wide Temperature Behavior of Silicon-Based GaN Surface Acoustic Wave Resonators with Ultrahigh Quality Factor

Fabrication of gallium nitride waveguide resonators by high-power impulse magnetron sputtering at room temperature

Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

On‐Chip Tightly Confined Guiding and Splitting of Surface Acoustic Waves Using Line Defects in Phononic Crystals

Ultra flexible pseudo-lamb wave RF resonators based on ZnO/PI and AlN/PI structures

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer

Phononic band structure engineering for high-Q gigahertz surface acoustic wave resonators on lithium niobate

Plasma-enhanced chemical vapor deposition a-SiOCN:H low-Z thin films for bulk acoustic wave resonators

Monolithic integration of GaN-based micromechanical resonators and HEMTs for timing applications

Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

Gigahertz phononic integrated circuits on thin-film lithium niobate on sapphire

Monolithic Integrated Multiband Acoustic Devices on Heterogeneous Substrate for Sub-6 GHz RF-FEMs

2-16 GHz Multifrequency X-Cut Lithium Niobate NEMS Resonators on a Single Chip