Abstract:Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on Gallium Nitride High Electron Mobility Transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 x1012 to 3.76x1014 cm-2, and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. HRTEM (High-Resolution Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy) analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (~ 750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

A Thorough Study on the Effect of 3-Mev Proton Irradiation on the Performance of AlGaN/GaN HEMTs

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors

Effects of 3 MeV proton irradiations on AIGaN/GaN high electron mobility transistors

Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors

Proton Irradiation Effect of GaN-based High Electron Mobility Transistor

The Effects of Proton Irradiation on the Electrical Properties of Nbalo/Algan/Gan Mis-Hemt

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions

Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Influence of Poly-AlN Passivation on the Performance Improvement of 3-Mev Proton-Irradiated AlGaN/GaN MIS-HEMTs

Mechanism of Reverse Gate Leakage Current Reduction in AlGaN/GaN High-Electron-mobility-transistor after 3-Mev Proton Irradiation

Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Effect of proton irradiation on electric properties in AlGaAs/GaAs heterostructure materials

Characterization of Bulk Traps and Interface States in AlGaN/GaN Heterostructure under Proton Irradiation

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films