Abstract:Influences of 170-keV protons beam irradiation on the static and dynamic properties of blue light InGaN/GaN multiple quantum wells (MQWs) microlight-emitting diodes (MicroLEDs) were investigated. It was interesting to find out that, although threshold voltage and light output power of Micro-LEDs deteriorated after proton irradiation, a 3-dB bandwidth was greatly improved. In quantitative terms, at the forward current density of 1 kA/cm 2 , 3-dB bandwidth increased from original 7.34 to 119.74 MHz when Micro-LED exposed to proton beam with the fluence of 5 × 1014 p/cm2. Based on the frequency response data analysis, differential carrier lifetimes of MicroLEDs, including Shockley-Read-Hall (SRH) lifetime and differential radiation recombination lifetime, were compared. The results pointed out that both SRH and recombination lifetimes became shorter after proton irradiation, indicating that competition between the nonradiative and radiative recombination processes was enhanced by proton beam. To reveal the origination of the 3-dB bandwidth improvement, photoluminescence (PL) and time-resolved PL (TRPL) spectrums of Micro-LEDs were measured. MQWs' PL spectrum with a peak wavelength of 450 nm was observed and its intensity decreased as proton fluence increasing. Meanwhile, a PL peak at 550 nm, which was well known as defect-related PL spectrum, was enhanced by proton irradiation, especially at a proton fluence of 5 × 10 13 and 5 × 10 14 p/cm 2 , proving the increase of defects in epitaxial thin films as proton fluence increasing. In the TRPL experimental study, the nonradiative recombination lifetime decreased with proton fluence, which was consistent with the results analyzed by frequency response. Overall, the improvement of 3-dB bandwidth could be mainly attributed to the decrease of carrier lifetime in MQWs, which were caused by the generation of defects due to the atom displacement effect of proton irradiation.

Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Degradation of Electrical Performance and Radiation Damage Mechanism of Cascode GaN HEMT with 80 MeV Proton

Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Investigation of Proton Radiation Effect on Indium Gallium Nitride Light Emitting Diodes

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

Simulation Study of Displacement Damage Induced by Protons in Al<sub>x</sub>Ga<sub>1</sub><em><sub>−</sub></em><sub>x</sub>N Materials

Simulation study of displacement damage induced by protons in Al x Ga 1 − x N materials

In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of ε-Ga2O3 thin films

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Trap-induced Electrical Degradation in Edge-Termination-hardened NiO/β-Ga2O3 Heterojunction under 10 MeV Fluence-Dependent Proton Irradiations

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Simulation of Displacement Damage Induced by Protons Incident on AlxGa1-xN Materials

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Mechanism Analysis of Proton Irradiation-Induced Increase of 3-Db Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication