Abstract:The AlGaAs/GaAs heterostructure material used for high electron mobility transistor (HEMT) has been irradiated by protons with energy from 60 to 115 keV and particle fluence from 1 X 10(13) to 1 X 10(15) cm(-2). The changes in electric transport behavior of two-dimensional electron gas (2DEG) are shown to be dependent on the energy and the fluence of the proton. It is found that the electron mobility [L is decreased approximately 65% at a fluence of 1 X 10(13) cm(-2) and shows a linear response to the fluence, until the fluence reaches 5 X 10(14) cm(-2), and then it shows a tendency toward saturation. The saturated value of Deltamu/mu(0) is approximately 85%. The carrier concentration n varies with mobility, and at a proton energy of 60 keV and fluence of 1 X 10(13) cm(-2), the concentration is reduced to 95%. As the concentration of carrier diminishes, the resistance of materials increases by two or three orders of magnitude at room temperature and increases even more sharply at 77 K. Annealing experiments were carried out after irradiation. The electric properties of materials could not be restored after annealing. Therefore, the electric properties of HEMT material are degenerated by proton irradiation. The threshold value of proton energy and the fluence are given. The defects induced by proton irradiation were measured by DLTS. The activation energy, capture cross-section and defect concentration were determined. (C) 2002 Elsevier Science B.V. All rights reserved.

Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors

Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors

Effects of 3 MeV proton irradiations on AIGaN/GaN high electron mobility transistors

A Thorough Study on the Effect of 3-Mev Proton Irradiation on the Performance of AlGaN/GaN HEMTs

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Proton Irradiation Effect of GaN-based High Electron Mobility Transistor

Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors

Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions

Effect of proton irradiation on electric properties in AlGaAs/GaAs heterostructure materials

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

The Effects of Proton Irradiation on the Electrical Properties of Nbalo/Algan/Gan Mis-Hemt

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Neutron Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Degradation of Electrical Performance and Radiation Damage Mechanism of Cascode GaN HEMT with 80 MeV Proton

Analysis of the Decrease of Two-Dimensional Electron Gas Concentration in GaN-based HEMT Caused by Proton Irradiation*

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Mechanism of Reverse Gate Leakage Current Reduction in AlGaN/GaN High-Electron-mobility-transistor after 3-Mev Proton Irradiation

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs