Abstract:AlGaN/GaN high election mobility transistor (HEMT) has important application prospects in satellite communication, radar, nuclear reactors and other extreme environments, owing to its excellent electrical performance and strong radiation resistance. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT device. In this work, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the two-dimensional electron gas (2DEG) concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this work, AlGaN/GaN high electron mobility transistors are irradiated by 181Ta32+ ions with fluences of 1×108 ions/cm2, 1×109 ions/cm2 and 1×1010 ions/cm2. The electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation are measured. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×1010 ions/cm2, the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation are analyzed by EMMI test, and it is found that the number of “hot spots” increases significantly after the having been irradiated by heavy ions with a fluence of 1×1010 ions/cm2, indicating that the radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reaches 1×1010 ions/cm2, the defect density increases to 3.19×1018 cm–3·eV–1, and the Hooge parameter increases after having been irradiated by heavy ions. We believe that the radiation leads to the defect density and parasitic series resistance of AlGaN/GaN HEMT device to increases, resulting in larger Hooge parameters. Through analyzing the variation of the normalized power spectral density of the drain current noise with bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors

Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors

A Thorough Study on the Effect of 3-Mev Proton Irradiation on the Performance of AlGaN/GaN HEMTs

Effects of 3 MeV proton irradiations on AIGaN/GaN high electron mobility transistors

Proton Irradiation Effect of GaN-based High Electron Mobility Transistor

The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs

The Effects of Proton Irradiation on the Electrical Properties of Nbalo/Algan/Gan Mis-Hemt

Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions

Analysis of the Decrease of Two-Dimensional Electron Gas Concentration in GaN-based HEMT Caused by Proton Irradiation*

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

Effect of Heavy Ion Radiation on Low Frequency Noise Characteristics of AlGaN/GaN High Electron Mobility Transistors

Neutron Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Effect of Proton Irradiation on the Mobility of Two-Dimensional Electron in AlGaN/AlN/GaN High Electron Mobility Transistors at Low Temperature

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors