Abstract:AlGaN/GaN High Election Mobility Transistor (HEMT), due to its excellent electrical performance and strong radiation resistance, has important application prospects in satellite communications, radar, nuclear reactors and other extreme environments. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT devices. In this paper, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the 2DEG concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this paper, AlGaN/GaN high electron mobility transistors irradiated by 181 Ta 32+ with fluence of 1×10 8 ions/cm 2 、1×10 9 ions/cm 2 and 1×10 10 ions/cm 2 are used to measure the electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×10 10 ions/cm 2 , the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation were analyzed by EMMI test, and it was found that the number of "hot spots" increased significantly after the injection of heavy ion radiation of 1×10 10 ions/cm 2 , indicating that radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reached 1×10 10 ions/cm 2 , the defect density increased to 3.19×10 18 cm -3 eV -1 , and the Hooge parameter increased after heavy ion radiation. We believe that radiation leads to increased defect density and parasitic series resistance of AlGaN/GaN HEMT devices, resulting in larger Hooge parameters. Through the function of the normalized power spectral density of the drain current noise and the bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

Neutron Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Heavy-Ion Radiation Effects in AlGaN/GaN High Electron Mobility Transistors

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Degradation of Electrical Performance and Radiation Damage Mechanism of Cascode GaN HEMT with 80 MeV Proton

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Fast neutron irradiation effects on AlGaN deep ultraviolet light emitting diodes

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation