Abstract:Pump–probe thermoreflectance (Pump–probe TR) is a noncontact detection technique that has been widely used for thermal characterization of materials. In the traditional characterization process, spot detection is usually employed to fit unknown thermal property parameters using a nonlinear fitting process. However, when processing a large amount of data in a specified area of a sample, the traditional measurement process appears to be time-consuming and labor-intensive. In this work, we propose a high-throughput method for semiconductor thermophysical characterization. The optical path of the measurement system is combined with automatic control components to realize automatic scanning measurements. Deep learning techniques are utilized for high-throughput data processing. We first demonstrated the entire measuring process with a Au–sapphire sample, whose interlayers are intentionally controlled by coating different interlayers. The validity of the method can be demonstrated by the measurement results of the thermal boundary conductance (TBC) of Au–sapphire and the thermal conductivity (TC) of sapphire in the scanned area. Then, we demonstrated the application of nondestructive scanning measurement in the industrial production of GaN-on-Si samples, comparing the measurement results at different resolutions. We validate the scanning results demonstrating that this method can measure with high accuracy and speed. Meanwhile, the high-resolution scanning measurement can observe the subtle difference in thermal characterization in the area. This method significantly reduces the time and labor required to measure compared to traditional methods and it is particularly efficient for thermophysical characterization detection of high-volume wafers.

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Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory

Understanding Transient Responses of Silicon Nanowire Photoconductors

Transient Rayleigh Scattering: A New Probe of Picosecond Carrier Dynamics in a Single Semiconductor Nanowire

Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photoreflectance

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Transient Rayleigh scattering from single semiconductor nanowires

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Analytical photoresponses of Schottky contact MoS2 phototransistors

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Measuring the Electrical Properties of Semiconductor Nanowires Using Terahertz Conductivity Spectroscopy

High-Throughput Thermophysical Characterization of Semiconductors

Explicit Photogain Theory for Nanowire Photoconductors Validated by TCAD Software Simulations

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Terahertz Probe of Photoexcited Carrier Dynamics in Dirac Semimetal Cd3As2

Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures

Direct Measurement for Nanoscale Vertical Carrier Diffusion on Semiconductor Surface—an Approach Toward Scanning Diffusion Microscopy

The Principle of Adaptive Excitation for Photoluminescence Imaging of Silicon: Theory