Abstract:MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) photoelectric effect (PE), (ii) photothermoelectric effect (PTE), (iii) excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/multi-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/multi-layer heterojunction. Finally, we investigate laser position dependent transient response of photocurrent to reveal trapping of carriers in SiO2 at the source junction is the critical factor to determine the transient response in 2D photodetectors, and also show that, by systematic device design, such trapping can be avoided in the heterojunction devices, resulting in fast transient response. The insights obtained will play an important role in designing fast 2D TMDs based photodetector and related optoelectronic and thermoelectric devices.

Analytical photoresponses of Schottky contact MoS2 phototransistors

Modeling and simulation of high gain monolayer MoS<inf>2</inf> photodetector

Scaling Analysis of High Gain Monolayer MoS 2 Photodetector for Its Performance Optimization

Analytical Photoresponses of 2D Semiconducting Photodetectors

High Performance MoS2 Phototransistors Photogated by PN Junction

Enhanced Photodetection Performance Of Schottky Pt/Sns2/Al And Au/Sns2/Al Photodetectors

Visible To Near-Infrared Photodetectors Based On Mos2 Vertical Schottky Junctions

Study of an MoS 2 phototransistor using a compact numerical method enabling detailed analysis of 2D material phototransistors

Photothermoelectric and Photovoltaic Effects Both Present in Mos2

Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

A Study of Lateral Schottky Contacts in WSe2 and MoS2 Field Effect Transistors Using Scanning Photocurrent Microscopy.

Enhanced Photoresponse Characteristics of Transistors Using CVD-grown MoS2/WS2 Heterostructures

Highly Sensitive MoS2 Photodetector Based on Charge Integration and Field-Coupled Effect

A Study on Ionic Gated MoS2 Phototransistors

Mechanisms of photoconductivity in atomically thin MoS2

Ultrahigh Photoresponsivity MoS2 Photodetector with Tunable Photocurrent Generation Mechanism.

Gate Stimulated High-Performance MoS2-In(OH) X Se Phototransistor.

An ultrasensitive molybdenum-based double-heterojunction phototransistor