The Principle of Adaptive Excitation for Photoluminescence Imaging of Silicon: Theory

Friedemann D. Heinz,Yan Zhu,Ziv Hameiri,Mattias Juhl,Thorsten Trupke,Martin C. Schubert
DOI: https://doi.org/10.1002/pssr.201800137
2018-05-02
Abstract:An approach that determines the charge carrier lifetime from photoluminescence (PL) imaging that is virtually not affected by lateral charge carrier drift and diffusion and image smearing due to photon scattering is proposed. The approach attempts to create a laterally uniform charge carrier density within a sample with non‐homogeneous recombination properties via illumination with spatially varying intensity. Lateral excess charge carrier drift and diffusion is inherently absent in this situation. Furthermore, as a homogeneous PL intensity is monitored, any optical artefact induced by photon scattering in the investigated wafer or the detection charge‐coupled device is strongly suppressed compared to conventional PL imaging. Using numeric simulations of different lifetime distribution scenarios, including one based on measured micro‐photoluminescence (μ‐PL) lifetime data, we demonstrate the feasibility of this proposed “Adaptive Excitation Photoluminescence Imaging” (Ax‐PLI) method. Heinz et al. discuss a new experimental photoluminescence (PL) imaging idea based on excitation with laterally non‐homogeneous intensity patterns. This approach promises to be free from image blurring by lateral drift and diffusion of charge carriers and photon scattering, which are the main drawbacks of PL imaging.
physics, condensed matter, applied,materials science, multidisciplinary
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