A 170~260ghz On-wafer Probe Based on High Resistivity Silicon

Jingsong Xu,Cheng Guo,Qian Yang,Anxue Zhang
DOI: https://doi.org/10.1109/iceict61637.2024.10671208
2024-01-01
Abstract:Measurement of devices in high frequencies is important for characterization, especially for millimeter and submillimeter wave band. As an effective alternative for conventional measurement with fixtures, on-wafer probes are favored for avoiding extra expense and performance deterioration. In this work, a high resistivity silicon based RF probe operating in 170~260GHz is proposed. The simulation exhibits return loss better than 15dB and insertion loss better than 1.6dB.
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