Abstract:As field effect transistors are reduced to nanometer dimensions, experimental and theoretical research has shown a gradual change in noise generation mechanisms. There are few studies on noise theory for small nanoscale transistors, and Monte Carlo (MC) simulations mainly focus on 2D devices with larger nanoscale dimensions. In this study, we employed MC simulation techniques to establish a 3D device simulation process. By setting device parameters and writing simulation programs, we simulated the raw data of channel current noise for a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 nm channel length and calculated the drain output current based on these data, thereby achieving static testing of the simulated device. Additionally, this study obtained a 3D potential distribution map of the device channel surface area. Based on the original data from the simulation analysis, this study further calculated the power spectral density of the channel current noise and analyzed how the channel current noise varies with gate voltage, source-drain voltage, temperature, and substrate doping density. The results indicate that under low-temperature conditions, the channel current noise of the 10 nm MOSFET is primarily composed of suppressed shot noise, with the proportion of thermal noise in the total noise slightly increasing as temperature rises. Under normal operating conditions, the channel current noise characteristics of the 10 nm MOSFET device are jointly characterized by suppressed shot noise, thermal noise, and cross-correlated noise. Among these noise components, shot noise is the main source of noise, and its suppression degree decreases as the bias voltage is reduced. These findings are consistent with experimental observations and theoretical analyses found in the existing literature.

Low-Frequency Noise in High-Current MoS2 Vertical Field-Effect Transistors with Nanoscale Channel

Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Improved Low-Frequency Noise in CVD Bilayer MoS2 Field-Effect Transistors

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Performance Limits Of The Self-Aligned Nanowire Top-Gated Mos2 Transistors

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 Nm.

Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

Quantum-mechanical effect in atomically thin MoS2 FET

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Transferred Van Der Waals Metal Electrodes for Sub-1-nm MoS 2 Vertical Transistors

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

Channel Length Scaling of MoS2 MOSFETs

Two-Dimensional Vertical Transistor with One-Dimensional van der Waals Contact