Abstract:In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory applications. The proposed device utilizes nickel (Ni) instead of tungsten (W) for the GSL and SSL gates, enabling optimized polarization properties during the annealing process and leveraging the disparity in thermal expansion coefficients. Notably, the difference in thermal expansion coefficient from tungsten (W), employed in other Word Line (WL) gates, allows effective control over polarization properties. To validate the proposed structure, we fabricated and measured a Metal–Ferroelectric–Insulator–Silicon (MFIS) capacitor utilizing Hafnium–Zirconium Oxide (HZO) material. The measurement results indicate that a change in the upper metal layer results in a more than fivefold increase in the variance of polarization characteristics between the WL gates (responsible for the memory function) and the SSL and GSL gates dedicated to channel control. In addition, process simulation was conducted using the same device structure, confirming the application of tensile stress to the HZO thin film in the case of a W electrode and compressive stress in the case of a Ni electrode. Furthermore, applying this controlled polarization characteristic parameter to the 3D NAND flash memory structure revealed a reduction in the threshold voltage shift of the control gate from a previous change of 2.6 V or more to 0.05 V, facilitating stable control.

High Performance HfLaO-based TiO2-Channel FE V-NAND with High Consistency and Low Operation Voltage

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

HfO 2 -based Junctionless FeFET Array on FDSOI Platform for NAND Memory Application

Ultrathin TIO2 Channel HfLaO FeFET with Low Operation Voltage

HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications

Optimized MFS Stack with N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs

Nonvolatile Ferroelectric Field-Effect Transistors.

Downsizing and Memory Array Integration of Pt/Srbi2ta2o9/Hf-Al-O/Si Ferroelectric-Gate Field-Effect Transistors

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

A Novel High-Endurance FeFET Memory Device Based on ZrO 2 Anti-Ferroelectric and IGZO Channel

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

Logic Compatible High-Performance Ferroelectric Transistor Memory

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors