Graphene: Two‐Stage Metal‐Catalyst‐Free Growth of High‐Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (adv. Mater. 7/2013)

Jianyi Chen,Yunlong Guo,Yugeng Wen,Liping Huang,Yunzhou Xue,Dechao Geng,Bin Wu,Birong Luo,Gui Yu,Yunqi Liu
DOI: https://doi.org/10.1002/adma.201370040
IF: 29.4
2013-01-01
Advanced Materials
Abstract:Advanced MaterialsVolume 25, Issue 7 p. 938-938 Inside Front CoverFree Access Graphene: Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (Adv. Mater. 7/2013) Jianyi Chen, Jianyi Chen Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYunlong Guo, Yunlong Guo Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYugeng Wen, Yugeng Wen Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorLiping Huang, Liping Huang Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYunzhou Xue, Yunzhou Xue Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorDechao Geng, Dechao Geng Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorBin Wu, Bin Wu Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorBirong Luo, Birong Luo Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorGui Yu, Gui Yu Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYunqi Liu, Corresponding Author Yunqi Liu liuyq@iccas.ac.cn Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaBeijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.Search for more papers by this author Jianyi Chen, Jianyi Chen Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYunlong Guo, Yunlong Guo Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYugeng Wen, Yugeng Wen Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorLiping Huang, Liping Huang Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYunzhou Xue, Yunzhou Xue Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorDechao Geng, Dechao Geng Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorBin Wu, Bin Wu Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorBirong Luo, Birong Luo Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorGui Yu, Gui Yu Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYunqi Liu, Corresponding Author Yunqi Liu liuyq@iccas.ac.cn Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaBeijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.Search for more papers by this author First published: 14 February 2013 https://doi.org/10.1002/adma.201370040Citations: 3AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract High-quality graphene polycrystalline films are directly synthesized on dielectric silicon nitride substrates by using two-stage metal-catalyst-free chemical vapor deposition. Thus large-scale electronic devices are easily fabricated on these films without complicated transfer processes and their associated problems. The method is compatible with current Si processing techniques. Further details can be found in the article by Yunqi Liu and co-workers on page 992. Citing Literature Volume25, Issue7February 20, 2013Pages 938-938 RelatedInformation
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