Abstract:Ge–Sb–Te alloys are widely used for data recording based on the rapid and reversible amorphous-to-crystalline phase transformation that is accompanied by increases in the optical reflectivity and the electrical conductivity. However, uncertainties about the optical band gaps and electronic transport properties of these phases have persisted because of inappropriate interpretation of reported data and the lack of definitive analytical studies. In this paper we characterize the most widely used composition, Ge2Sb2Te5, in its amorphous, face-centered-cubic, and hexagonal phases, and explain the origins of inconsistent or unphysical results in previous reports. The optical absorption in all of these phases follows the relationship αhν∝(hν−Egopt)2, which corresponds to the optical transitions in most amorphous semiconductors as proposed by Tauc, Grigorovici, and Vancu [Tauc et al., Phys. Status Solidi 15, 627 (1966)], and to those in indirect-gap crystalline semiconductors. The optical band gaps of the amorphous, face-centered-cubic, and hexagonal phases are 0.7, 0.5, and 0.5eV, respectively. The subgap absorption in the amorphous phase shows an exponential decay with an Urbach slope of 81meV. We measured the photoconductivity of amorphous Ge2Sb2Te5 and determined a mobility-lifetime product of 3×10−9cm2∕V. The spectral photoconductivity shows a threshold at about 0.7eV, in agreement with our analysis of the optical band gap. The face-centered-cubic and hexagonal phases are highly conductive and do not show freeze-out; even at 5K the density of free carriers remains at 1019–1020cm−3, so these are degenerate semiconductors in which the Fermi level resides inside a band. In the hexagonal phase, the effect of free electrons on the Hall coefficient is significant at high temperatures. When the Hall data are fitted using the two-carrier analysis, the hole mobility is found to decrease slowly with temperature, as expected. The considerations discussed in this paper can be readily applied to study related chalcogenide materials.

Dielectric spectroscopy of Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and VO<inf>2</inf> upon temperature-induced phase transitions

Terahertz-infrared spectroscopy of Ge2Sb2Te5 films on sapphire: Evolution of broadband electrodynamic response upon phase transitions

THz optical characterization of novel chalcogenide phase change materials

Phase change of Ge 2 Sb 2 Te 5 under terahertz laser illumination

Phase change of Ge2Sb2Te5 under terahertz laser illumination

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Thermal Conductivity of Phase-Change Material Ge2Sb2Te5

An Investigation into the Kinetics and Mechanism of Phase Transitions in Optical Phase Change Ternary Alloy $Ge_2Sb_2Te_5$

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

A remarkable match of optical response in the amorphous-crystalline and zinc blende-rock salt phase pairs of GeTe

Temperature dependent dielectric properties of GeTe-rich (GeTe)<sub>x</sub>(Sb<sub>2</sub>Te<sub>3</sub>)<sub>1-x</sub> glass

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Broadband and ultrafast terahertz modulation with GeTe thin films

In-situ Heating TEM Study of Phase Change Material

Photonic Ge-Sb-Te Phase Change Metamaterials and Their Applications

Tunable colorimetric thin-film structures based on phase change materials

Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 During Phase Transition