Abstract:BaTiO3 has advantages of high permittivity, low dielectric loss, low cost and environment friendly. However, due to the nonlinear dielectric behavior occurred around the phase transition temperature of BaTiO3 ceramic, its availability in the field of temperature-stable capacitor is limited. To modify the dielectric-temperature properties of BaTiO3, a series of BaTi1-xCexO3 (x=0-0.20) ceramics was synthesized by solid-state reaction method. Ce dopant was introduced into the B-site (Ti-site) of BaTiO3. The effects of Ce dopant on the phase evolution, defect state, microstructure and dielectric properties were investigated. The modifying mechanism was also discussed with the help of first-principles calculation method. In all ceramic samples, it is revealed that Ce element completely enters the B-site of BaTiO3 in the form of Ce4+ ion. With the increase of Ce doping concentration, the room temperature structure of BaTi1-xCexO3 ceramics transforms from tetragonal/pseudo-cubic structure into orthorhombic/tetragonal structure, then into pseudo-cubic structure. Owing to the radius difference between Ce4+ and Ti4+ ions, Ce doping will lead to the rising of lattice parameters, accompanied by the appearance of local distortion and the decrease of long-range ferroelectric order, the variation of band structure, density of states and charge density configuration, as well as the generation of Ba and Ti vacancies. Compared with pure BaTiO3 ceramic, the average grain size of Ce-doped ceramics decreases first and then increases with the increase of Ce content, while the relative density of ceramics increases gradually. The peak dielectric constant of BaTi1-xCexO3 ceramic increases first and then decreases as the Ce concentration increasing. The corresponding temperature is slowly reduced from 122 celcius to 112 celcius in the x value range of 0-0.08, then rapidly declines to -3 celcius in the x value range of 0.08-0.20. BaTi1-xCexO3 ceramics with x >= 0.06 have the dielectric behavior of diffused phase transition (DPT). And the x=0.20 ceramic exhibits the typical characteristic of relaxor ferroelectric, with the room temperature dielectric constant of 3258.38, and the |Delta epsilon(r)/epsilon(r25 celcius)|<= 22% temperature range of -60-87 celcius, which matches the requirement of EIA X5S standard. Therefore, it can be concluded that B-site Ce doping will effectively enhance the permittivity stability of BaTiO3 in a variable temperature environment. This will provide some new ideas to develop dielectric materials with stable dielectric properties in wide temperature range.

Defect Control of Donor Doping on Dielectric Ceramics to Improve the Colossal Permittivity and Temperature Stability

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

Defect engineering in rare‐earth‐doped BaTiO 3 ceramics: Route to high‐temperature stability of colossal permittivity

Significantly Enhanced Dielectric Properties of BaTiO3-based Ceramics Via Synergetic Grain Size and Defect Engineering

Anti-occupation Defect Dipole and Gradient Interface Induced Excellent Giant Permittivity in Sr0.95Bi0.05TiO3 Ceramics

Improving Multifunctional Performance of Dy-doped (ba0.85ca0.15)(zr0.1ti0.9)o< Sub>3 Ceramics Via Tailoring Dy-doping Amount and Ceramic Processing

Hole-pinned Defect-Dipoles Induced Colossal Permittivity in Bi Doped SrTiO3 Ceramics with Sr Deficiency

Improving Energy Storage Performance of Barium Titanate-Based Ceramics by Doping MnO2

Doping Effects In (Ba0.85ca0.15)(Hf0.1ti0.9)O-3 Lead-Free Piezoelectric Ceramics Prepared Via Powder Injection Moulding Using Simple Binder

Experimental study and first-principles calculation of structural characteristics and dielectric properties of Ba Ti<sub>1-x </sub>Ce<sub>x </sub>O<sub>3</sub> ceramics

Enhancement of Nonlinear Dielectric Properties in BiFeO3–BaTiO3 Ceramics by Nb-Doping

Unveiling High Resistivity Mechanism in (0.8-X)batio3-0.2bisco3-x(bi0.5li0.5)tio3 Ceramics with Good Dielectric Temperature-Stability

A Method for Improving Temperature Stability of Dielectric Permittivity for BaTiO3 Ceramics

Colossal Permittivity and Ultralow Dielectric Loss in Nb-doped SrTiO 3 Ceramics

Colossal Permittivity, Low Dielectric Loss, and Good Thermal Stability Achieved in Ta-doped BaTiO3 by B-site Defect Engineering

Effects of A/B-Site Co-Doping on Microstructure and Dielectric Thermal Stability of AgNbO3 Ceramics

The self-compensation mechanism in barium titanate ceramics with colossal permittivity

Diffusion and Defect Chemistry of Temperature-Stable BaTiO3-based Ceramics: Experiment and Theoretical Calculations

Wide temperature range of stable dielectric properties in relaxor BaTiO3-based ceramics by co-doping synergistic engineering

Optimization of Energy Storage Properties in Lead-Free Barium Titanate-Based Ceramics via B-Site Defect Dipole Engineering

Giant Permittivity and Humidity Sensitivity of SrTiO 3 Based Ceramics Induced by K,Nb Donor-Acceptor Co-Doping