Abstract:BaTiO3 has advantages of high permittivity, low dielectric loss, low cost and environment friendly. However, due to the nonlinear dielectric behavior occurred around the phase transition temperature of BaTiO3 ceramic, its availability in the field of temperature-stable capacitor is limited. To modify the dielectric-temperature properties of BaTiO3, a series of BaTi1-xCexO3 (x=0-0.20) ceramics was synthesized by solid-state reaction method. Ce dopant was introduced into the B-site (Ti-site) of BaTiO3. The effects of Ce dopant on the phase evolution, defect state, microstructure and dielectric properties were investigated. The modifying mechanism was also discussed with the help of first-principles calculation method. In all ceramic samples, it is revealed that Ce element completely enters the B-site of BaTiO3 in the form of Ce4+ ion. With the increase of Ce doping concentration, the room temperature structure of BaTi1-xCexO3 ceramics transforms from tetragonal/pseudo-cubic structure into orthorhombic/tetragonal structure, then into pseudo-cubic structure. Owing to the radius difference between Ce4+ and Ti4+ ions, Ce doping will lead to the rising of lattice parameters, accompanied by the appearance of local distortion and the decrease of long-range ferroelectric order, the variation of band structure, density of states and charge density configuration, as well as the generation of Ba and Ti vacancies. Compared with pure BaTiO3 ceramic, the average grain size of Ce-doped ceramics decreases first and then increases with the increase of Ce content, while the relative density of ceramics increases gradually. The peak dielectric constant of BaTi1-xCexO3 ceramic increases first and then decreases as the Ce concentration increasing. The corresponding temperature is slowly reduced from 122 celcius to 112 celcius in the x value range of 0-0.08, then rapidly declines to -3 celcius in the x value range of 0.08-0.20. BaTi1-xCexO3 ceramics with x >= 0.06 have the dielectric behavior of diffused phase transition (DPT). And the x=0.20 ceramic exhibits the typical characteristic of relaxor ferroelectric, with the room temperature dielectric constant of 3258.38, and the |Delta epsilon(r)/epsilon(r25 celcius)|<= 22% temperature range of -60-87 celcius, which matches the requirement of EIA X5S standard. Therefore, it can be concluded that B-site Ce doping will effectively enhance the permittivity stability of BaTiO3 in a variable temperature environment. This will provide some new ideas to develop dielectric materials with stable dielectric properties in wide temperature range.

The self-compensation mechanism in barium titanate ceramics with colossal permittivity

Colossal Dielectric Performance of Pure Barium Titanate Ceramics Consolidated by Spark Plasma Sintering

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

Compositional modulation and annealing treatment in BaTiO3 to simultaneously achieve colossal permittivity, low dielectric loss, and high thermal stability

Improving Energy Storage Performance of Barium Titanate-Based Ceramics by Doping MnO2

Selectively Doped Barium Ferrite Ceramics with Giant Permittivity and High Tunability under Extremely Low Electric Bias

Defect engineering in rare‐earth‐doped BaTiO 3 ceramics: Route to high‐temperature stability of colossal permittivity

Charge compensation in ZnO-Ln2O3 co-doped barium zirconate titanate ceramics

A Method for Improving Temperature Stability of Dielectric Permittivity for BaTiO3 Ceramics

The Quantizable Contribution of Epdd, Sblc, and Iblc Effects to Colossal Permittivity in La-Doped Batio3 Ceramic

Simultaneous enhancement of polarization and breakdown strength in lead-free BaTiO3-based ceramics

Charge Compensation in Zno-Ln(2)O(3) Co-Doped Barium Zirconate Titanate Ceramics

Space-charge-induced colossal dielectric constant and large flexoelectricity in Nb-doped BaTiO3 ceramics

Charge compensation mechanisms of BaTiO3 ceramics co-doped with La2O3 and Bi2O3

Anti-occupation Defect Dipole and Gradient Interface Induced Excellent Giant Permittivity in Sr0.95Bi0.05TiO3 Ceramics

Ultrahigh dielectric breakdown strength and excellent energy storage performance in lead-free barium titanate-based relaxor ferroelectric ceramics via a combined strategy of composition modification, viscous polymer processing, and liquid-phase sintering

Improved energy storage performance of lead-free BaTi0.96Li0.04O2.94 ceramics via domain structure engineering

Mechanism of oxygen vacancies migration in BaTiO3‐BiMeO3: experimental investigations and first principles studies

Experimental study and first-principles calculation of structural characteristics and dielectric properties of Ba Ti<sub>1-x </sub>Ce<sub>x </sub>O<sub>3</sub> ceramics

Optimization of Energy Storage Properties in Lead-Free Barium Titanate-Based Ceramics via B-Site Defect Dipole Engineering

Significantly Enhanced Dielectric Properties of BaTiO3-based Ceramics Via Synergetic Grain Size and Defect Engineering