Controlled Corrosion Behaviors of Copper in Oxidizer Solutions for Chemical Mechanical Polishing: Influence of the Decomposition Products

Pengfei Chang,Zisheng Huang,Yulong Chen,Huiqin Ling,Yunwen Wu,Ming Li,Tao Hang
DOI: https://doi.org/10.1016/j.corsci.2024.112352
IF: 7.72
2024-01-01
Corrosion Science
Abstract:The influence of the oxidizers including H2O2, K2S2O8, KMnO4, KClO4, KIO4 and (NH4)2S2O8 on copper chemical mechanical poshing was systematically investigated. Microscopic observations, electrochemical characterizations and X-ray photoelectron spectroscopy depth profile analyses revealed that the corrosion and removal behaviors were determined by the decomposition product of the oxidizers, other than their oxidizing capabilities. All oxidizers, except the persulfate, generated significant quantities of OH- ions upon decomposition, which formed a dense passivation oxide film on copper surface. While the copper surfaces in the neutral persulfate solutions were porous and loose, promoting the oxidizer to penetrate and further corrode the inner layer.
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