Abstract:Atomically thin bismuth oxyselenide (Bi2 O2 Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi2 O2 Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2 O2 Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi2 O2 Se and representative transition metal dichalcogenides (namely, WS2 /Bi2 O2 Se and MoS2 /Bi2 O2 Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi2 O2 Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi_2O_2Se/SrTiO_3 Ultrathin Heterojunction

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

Band Alignment at the Interface of Pbte/Snte Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Polar discontinuities and interfacial electronic properties of Bi2O2Se on SrTiO3

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Electronic structure and band alignment at an epitaxial spinel/perovskite heterojunction.

Polar discontinuities and interfacial electronic properties of Bi$_2$O$_2$Se on SrTiO$_3$

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Thickness- and strain-tunable electronic structures of two-dimensional Bi2O2Se

Bi2O2Se: A rising star for semiconductor devices

Thickness-modulated Electronic Band Structures and Exciton Behavior of Non-Van-der-waals 2D Bi2O2Se Films

Investigation of the Band Alignment at MoS2/PtSe2 Heterojunctions

Manipulating Topological Properties in Bi$_2$Se$_3$/BiSe/TMDC Heterostructures with Interface Charge Transfer

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy.

Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

High Electron Mobility and Quantum Oscillations in Non-Encapsulated Ultrathin Semiconducting Bi2O2Se.

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.