Abstract:Leveraging from thickness control methodology, vertical ferroelectric polarization switching is recorded on a 6 nm thick specimen probed by a piezoresponse force microscopy. The ferroelectric origin is uncovered by first‐principles density‐functional theory calculations. Bi2O2Se‐based field‐effect transistor demonstrated an unprecedented current on–off ratio of 108 and carrier mobility of 131 cm2 V−1 s−1. This work manifests the feasibility of 2D Bi2O2Se for next‐generation electronics. The amelioration of atomically thin ferroelectric materials is imperative for next‐generation outperformed two‐dimensional (2D) electronics, which is elusive by their bulk counterparts. These remarkable materials' ferroelectric and piezoelectric features are the fundamental urges in optoelectronics, electronics, and energy harvesting. In this work, 2D ferroelectric Bi2O2Se flakes have been synthesized using a modified chemical vapor deposition technique. The 6 nm thick Bi2O2Se flake provides a robust ferroelectric switching under an applied voltage of ±10 V by piezoresponse force microscopy, further confirmed by first principles. Leveraging the successful growth, the high‐quality Bi2O2Se flakes permit the fabrication of a field‐effect transistor (FET) with state‐of‐the‐art performance. The FET device rewards a high current on–off ratio of 108 and field effect mobility of almost 131 cm2 V−1 s−1, owing to the small carrier effective mass of 0.2 m0. Combined, the electric field‐induced local polarization of ferroelectric switching and unprecedented device performance of Bi2O2Se semiconductors are certified for their utilization in advanced nanoelectronics and miniaturization of multifunctional devices with multifunctionalities.

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy.

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi2O2Se/SrTiO3 Ultrathin Heterojunction

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi_2O_2Se/SrTiO_3 Ultrathin Heterojunction

Modulating the Band Alignments of Two-Dimensional In2Se3/InSe Heterostructure via Ferroelectric Polarization and Interlayer Coupling

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Van der Waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices

Highly insulating phase of Bi2O2Se thin films with high electronic performance

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

Highly Insulating Phase of Bi 2 O 2 Se Thin Films with High Electronic Performance

Tunable lattice dynamics and dielectric functions of two-dimensional Bi2O2Se: Striking layer and temperature dependent effects

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization.

Non Volatile MoS_2 Field Effect Transistors Directly Gated by Single Crystalline Epitaxial Ferroelectric

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors.

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals.

Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Bi2O2Se: A rising star for semiconductor devices

Tuning exciton emission via ferroelectric polarization at a heterogeneous interface between a monolayer transition metal dichalcogenide and a perovskite oxide membrane