Abstract:Over the past years, two-dimensional (2D) nanomaterials especially transition metal dichalcogenides (TMDs) have emerged as promising semiconductor materials to complement graphene-based electronics. They grain lots of attention due to their large number of candidates and varieties of physical properties. In this family, there are a wide range of materials exists ranging from Mott insulator semiconductor, metal, even to superconductor. Some of them, e.g. MoS2, MoSe2, WS2 and WSe2 have been widely investigated in these years, and they show unique properties for artificial van der Waals solids, electronics with ultra-low energy consumption, valleytronics, non-linear optics and high performance catalyst for hydrogen evolution reaction, while many of them still await a thorough theoretical and experimental exploration. Scientists in this field have try their best to modify the properties of this unique family. Charge carrier control is a key issue in the development of electronic functions of semiconductive materials. Beyond the simple enhancement of conductivity, high charge carrier accumulation can realize various phenomena, such as chemical reaction, phase transition, magnetic ordering, and superconductivity. In 2007, Hebard et al. reported the first electric-double-layer transistors (EDLT) using ionic liquid as the gate dielectric, the mobility was increased by 3 cm(2).V-1.s(-1) than the traditional transistor, this was the first demonstration that EDLT can be used to enhance the performance such as the mobility and the operation voltage of the devices. After that work, many works have been done using EDLT method. Very recently, scientists found that EDLT is also applicable for modifying the electronic properties of both organic and inorganic materials by control the charge carriers in the interface of the EDLT. Based on this method, high transistor performance, insulator-metal transitions, superconductivity, and even ferromagnetism have been released. In this review, we introduce and review the recent work for modifying the electronic properties based on 2D TMD materials.

Electric Double Layer Transistors Based on 2-D Electron Gases Operated at a Low Voltage for Synaptic Devices

Ion-Liquid-Gated KTaO3-Based Electric Double Layer Transistor

Electric-double-layer Transistors for Synaptic Devices and Neuromorphic Systems

Top-Gate Electric-Double-Layer IZO-Based Synaptic Transistors for Neuron Networks

Mott transistor with giant switching ratio at room temperature and its emulation of artificial synapses

Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices

Long-term Synaptic Plasticity Simulated in Ionic Liquid/polymer Hybrid Electrolyte Gated Organic Transistors

Electric-double-layer-gated transistors based on two-dimensional crystals: recent approaches and advances

Dual-liquid-gated electrochemical transistor and its neuromorphic behaviors

Side-liquid-gated electrochemical transistors and their neuromorphic applications

Design of 3-D Interface in Synaptic Transistors With Attojoule Power by Electrospinning Aligned Nanofibers for Neuromorphic Computing

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In 2 O 3 Electrolyte-Gated Transistors

Electric-double-layer Transistors Based on Two Dimensional Materials

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating

Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In2O3 Electrolyte-Gated Transistors

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Realization of Artificial Synapse and Inverter Based on Oxide Electric-Double-layer Transistor Gated by a Chitosan Biopolymer Electrolyte

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

All-solid-state Ion Doping Synaptic Transistor for Bionic Neural Computing