Electric-double-layer Transistors for Synaptic Devices and Neuromorphic Systems

Yongli He,Yi Yang,Sha Nie,Rui Liu,Qing Wan

DOI: https://doi.org/10.1039/c8tc00530c

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:This article reviews the recent progress in the field of electric-double-layer transistors for synaptic devices and neuromorphic systems.

What problem does this paper attempt to address?

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Fan Xia,Tian Xia,Li Xiang,Sujuan Ding,Shuo Li,Yucheng Yin,Meiqi Xi,Chuanhong Jin,Xuelei Liang,Youfan Hu

DOI: https://doi.org/10.1021/acsami.2c07825

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Biological nervous systems evolved in nature have marvelous information processing capacities, which have great reference value for modern information technologies. To expand the function of electronic devices with applications in smart health monitoring and treatment, wearable energy-efficient computing, neuroprosthetics, etc., flexible artificial synapses for neuromorphic computing will play a crucial role. Here, carbon nanotube-based ferroelectric synaptic transistors are realized on ultrathin flexible substrates via a low-temperature approach not exceeding 90 degrees C to grow ferroelectric dielectrics in which the single-pulse, pairedpulse, and repetitive-pulse responses testify to well-mimicked plasticity in artificial synapses. The long-term potentiation and long-term depression processes in the device demonstrate a dynamic range as large as 2000x, and 360 distinguishable conductance states are achieved with a weight increase/decrease nonlinearity of no more than 1 by applying stepped identical pulses. The stability of the device is verified by the almost unchanged performance after the device is kept in ambient conditions without additional passivation for 240 days. An artificial neural network-based simulation is conducted to benchmark the hardware performance of the neuromorphic devices in which a pattern recognition accuracy of 95.24% is achieved.
Electric Double Layer Transistors Based on 2-D Electron Gases Operated at a Low Voltage for Synaptic Devices

Chong Zhang,Yixin Zhu,Zhongqiang Chen,Li Zhu,Long Liu,Xu Zhang,Ruijie Xu,Guozhong Xing,Qing Wan,Rong Zhang,Xuefeng Wang

DOI: https://doi.org/10.1109/ted.2024.3435180

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Low-voltage-operated electric double layer transistor (EDLT) for synaptic devices are fabricated by leveraging the 2-D electron gases (2DEGs) formed at interfaces LaAlO3/KTaO3 (LAO/KTO) and LAO/SrTiO3 (STO) at room temperature (RT). The EDLT devices demonstrate promising characteristics, including a high ON/OFF-state current ratio of 1.0 x 10(6) and a low subthreshold swing (SS) of 138.9 mV/dec upon a low sweeping gate voltage ( V-g ) from - 1 to 2.5 V. The characteristics are comparable to those of 2DEGs-based field-effect transistors prepared at higher temperatures (>= 500 degree celsius). By harnessing the V-g-induced ions migration, we successfully develop the 2DEGs-based synaptic device capable of emulating neuromorphic features, including paired-pulse facilitation and filtering functionality. This research not only expands the range of room-temperature applications for 2DEGs in field-effect transistors (FETs), but also presents a viable approach to design 2DEGs-based synaptic devices for neuromorphic computing.
High-temperature-resistant Synaptic Transistors for Neuromorphic Computing

Xiao Liu,Liang Chu,Wensheng Yan,Xiaodong Pi

DOI: https://doi.org/10.1016/j.xcrp.2024.102079

IF: 8.9

2024-01-01

Cell Reports Physical Science

Abstract:Neuromorphic computing systems based on high-temperature-resistant synaptic devices have emerged as energy-efficient and intelligent strategies for harsh-environment applications, such as fire alarms, nuclear combustion monitoring, and planetary exploration. The synaptic devices can be constructed by two-terminal memristors or three-terminal field-effect transistors. Though the latter exhibits a relatively complex structure, they are advantageous for linear conductance switching, multi-terminal modulation, and emulation of versatile synaptic functionalities. Herein, we will summarize the recent progress of high-temperature-resistant synaptic transistors (HTRSTs). Firstly, an in-depth discussion is conducted regarding their working mechanisms, device structures, and temperature-dependent synaptic characteristics. Then, an overview of the active materials commonly employed in HTRSTs is provided. Several application scenarios of HTRSTs for neuromorphic computing are presented. Finally, a few perspectives and directions for the future development of HTRSTs are outlined.
High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

Qian Yang,Huihuang Yang,Dongxu Lv,Rengjian Yu,Enlong Li,Lihua He,Qizhen Chen,Huipeng Chen,Tailiang Guo

DOI: https://doi.org/10.1021/acsami.0c22271

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages of low dimension, simultaneous read-write operation and high efficiency. However, process compatibility and repeatability of these materials are still a big challenge, as well as other issues such as complex transfer process and material selectivity. In this work, synaptic transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited a high current switch ratio up to 106, well off state as low as nearly 10-12 A, and low operation voltage of -3 V. Moreover, various synaptic behaviors were successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, and long-term depression. More importantly, under ultrathin conditions, excellent memory preservation, and linearity of weight update were obtained because of the enhanced effect of defects and improved controllability of the gate voltage on the ultrathin active layer, which led to a pattern recognition rate up to 85%. This is the first work to demonstrate that the pattern recognition rate, a crucial parameter for neuromorphic computing can be significantly improved by reducing the thickness of the channel layer. Hence, these results not only reveal a simple and effective way to improve plasticity and memory retention of the artificial synapse via thickness modulation but also expand the material selection for the 2D artificial synaptic devices.
Synaptic Transistors and Neuromorphic Systems Based on Carbon Nano-Materials

Chunyu Du,Yumei Ren,Zhiyang Qu,Lili Gao,Yongbiao Zhai,Su‐Ting Han,Ye Zhou

DOI: https://doi.org/10.1039/d1nr00148e

IF: 6.7

2021-01-01

Nanoscale

Abstract:Carbon nano-material based synaptic transistors and neuromorphic systems are systematically reviewed.
Emerging Synaptic Devices: from Two-Terminal Memristors to Multiterminal Neuromorphic Transistors

S. Jiang,S. Nie,Y. He,R. Liu,C. Chen,Q. Wan

DOI: https://doi.org/10.1016/j.mtnano.2019.100059

IF: 10.3

2019-01-01

Materials Today Nano

Abstract:The conventional von-Neumann computing architecture is facing challenges including the heat wall, the memory wall, and the end of Moore’s law, which become even more severe in today’s era of big-data. Therefore, researchers are committed to exploit a new computing paradigm to address these issues and satisfy our ever-growing appetite for data and information. Inspired by our brain, new-concept synaptic devices and systems have aroused great research interests. Up to now, diverse neuromorphic devices have been proposed, such as resistive random-access memories, phase-change memories, electrolyte-gated thin-film transistors, and ferroelectric thin-film transistors. This review presents the structures, the operation mechanisms, and the advantages and disadvantages of each kind of synaptic devices. Moreover, recent advances of those synaptic devices for the hardware implementation of neuromorphic computing have also been reviewed in detail, as well as the challenges that need to be addressed in future research.
Oxide-Based Synaptic Transistors for Neuromorphic Systems

Qing Wan

DOI: https://doi.org/10.1149/ma2015-01/21/1367

2015-01-01

ECS Meeting Abstracts

Abstract:Inspired by the energy-efficient and cognitive computational ability of a biological brain, neuromorphic computing is an attractive computation paradigm that complements the von Neumann architecture. Hardware implementations of synapses, dendrites and spiking neural networks represent a promising computational paradigm for solving complex pattern recognition and sensory processing tasks. Here, artificial electronic synapses and dendrites are proposed based on the oxide-based electrical-double-layer transistors. Strong electrostatic coupling effect and electrochemical doping were observed due to proton migration in the P-doped SiO2 electrolyte films. Protons in the P-doped SiO2 electrolyte and oxide channel conductance were regarded as the neurotransmitter and synaptic weight, respectively. Spike-timing dependent plasticity, short-term plasticity, including paired-pulse facilitation, dynamic filtering was mimicked. Most importantly, dendritic arithmetic and spiking pH sensors with extremely low energy dissipation of 0.5pJ are also demonstrated in a simple artificial synapse with multiple pre-synaptic inputs. Our oxide-based protonic/electronic hybrid artificial synaptic transistors are potential building blocks for brain-inspired computers and neuromorphic systems. [1] L. Q. Zhu, C. J. Wan, L. Guo, Y. Shi, and Q. Wan*. Nature Communications, 5, 3158, 2014. [2] C. J. Wan, L. Q. Zhu, J. M. Zhou, Y. Shi, Q. Wan*. Nanoscale. 6, 4491, 2014. [3] C.J. Wan, L. Q. Zhu, Y. H. Liu, Y. Shi, and Q. Wan*. IEEE Electron Device Letters. 35, 672, 2014. [4] L.Q. Guo, Q. Wan*, C. J. Wan, L. Q. Zhu, Y. Shi. IEEE Electron Device Letters. 34,1581, 2013. [5] M.Z. Dai, Q. Wan*. Nano Letters 11, 3987, 2011.
(Invited) Multi-Terminal Oxide-based Electric-Double-Layer Thin-Film Transistors for Neuromorphic Systems

Yongli He,Qing Wan

DOI: https://doi.org/10.1149/08611.0177ecst

2018-01-01

Abstract:Our brain is a highly parallel, energy efficient, and event-driven information processing system, which is fundamentally different from traditional von Neumann computers. Inspired by biological neural computing, neuromorphic systems may open up new paradigms to deal with complicated problems such as pattern recognition and decision making. Hardware implementation of neurons and synapses by individual ionic/electronic hybrid device is of great significance for enhancing our understanding of the brain and solving sensory processing and complex recognition tasks. Although two-terminal memristors can perform some basic synaptic and neural functions, our human brain contains many more synapses than neurons. This fact suggests that multi-terminal devices are more favorable for complex neural network emulation. In recent years, multi-terminal electric-double-layer (EDL) thin-film transistors (TFTs) based on interfacial ion-modulation have attracted significant attention in mimicking synaptic dynamic plasticity and neural functions. Here, we provide the proof-of-principle artificial synapses/neurons based on oxide-based EDL TFTs gated by solid electrolytes with multiple driving and modulatory input terminals. Our results provide a new-concept approach for building brain-like cognitive systems.
Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application

Yuling Peng,Wei Dou,Pengfei Chen,Xiaodong Xu,Guanggang Jiang,Pufan Deng,Nenghui Zhang,Yanling Yin,Yuehua Peng,Dongsheng Tang

DOI: https://doi.org/10.1063/5.0219857

IF: 4

2024-08-26

Applied Physics Letters

Abstract:Inspired by the human brain's capacity as a powerful biological computer capable of simultaneously processing a vast array of cognitive tasks, many emerging artificial synapse devices have been developed in recent years. Electric-double-layer (EDL) transistors based on interfacial ion-modulation have attracted widespread attention for simulating synaptic plasticity and neural functions. Here, low-voltage EDL p-type thin-film transistors (TFTs) are fabricated on glass substrates, with Ni-doped cuprous iodide (Ni0.06Cu0.94I) as the channel and chitosan as the dielectric. The electrical performance of the Ni0.06Cu0.94I TFTs is investigated: current on/off ratio of 6.4 × 104, subthreshold swing of 33 mV/dec, threshold voltage of 1.38 V, operating voltage of 2 V, and saturation field-effect mobility of 15.75 cm2 V−1 s−1. A dual in-plane gate OR logic operation is demonstrated. Importantly, by applying single voltage pulses, dual voltage pulses, and multiple voltage pulses to the gate, the Ni0.06Cu0.94I transistors exhibited typical synaptic characteristics, including short-term potentiation, short-term depression, long-term potentiation, long-term depression, paired-pulse facilitation, and spiking-rate-dependent plasticity. Furthermore, the synaptic transistor can also simulate the learning–forgetting–relearning process of the human brain. These remarkable behaviors of voltage-stimulated synaptic transistors have potential for neuromorphic applications in future artificial systems.

physics, applied
Dielectric Engineered Two-Dimensional Neuromorphic Transistors

Du Xiang,Tao Liu,Xumeng Zhang,Peng Zhou,Wei Chen

DOI: https://doi.org/10.1021/acs.nanolett.1c00492

IF: 10.8

2021-04-09

Nano Letters

Abstract:Two-dimensional (2D) materials, which exhibit planar-wafer technique compatibility and pure electrically triggered communication, have established themselves as potential candidates in neuromorphic architecture integration. However, the current 2D artificial synapses are mainly realized at a single-device level, where the development of 2D scalable synaptic arrays with complementary metal-oxide-semiconductor compatibility remains challenging. Here, we report a 2D transition metal dichalcogenide-based synaptic array fabricated on commercial silicon-rich silicon nitride (sr-SiNx) substrate. The array demonstrates uniform performance with sufficiently high analogue on/off ratio and linear conductance update, and low cycle-to-cycle variability (1.5%) and device-to-device variability (5.3%), which are essential for neuromorphic hardware implementation. On the basis of the experimental data, we further prove that the artificial synapses can achieve a recognition accuracy of 91% on the MNIST handwritten data set. Our findings offer a simple approach to achieve 2D synaptic arrays by using an industry-compatible sr-SiNx dielectric, promoting a brand-new paradigm of 2D materials in neuromorphic computing.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Transistor-Based Synaptic Devices for Neuromorphic Computing

Wen Huang,Huixing Zhang,Zhengjian Lin,Pengjie Hang,Xing’ao Li

DOI: https://doi.org/10.3390/cryst14010069

IF: 2.7

2024-01-10

Crystals

Abstract:Currently, neuromorphic computing is regarded as the most efficient way to solve the von Neumann bottleneck. Transistor-based devices have been considered suitable for emulating synaptic functions in neuromorphic computing due to their synergistic control capabilities on synaptic weight changes. Various low-dimensional inorganic materials such as silicon nanomembranes, carbon nanotubes, nanoscale metal oxides, and two-dimensional materials are employed to fabricate transistor-based synaptic devices. Although these transistor-based synaptic devices have progressed in terms of mimicking synaptic functions, their application in neuromorphic computing is still in its early stage. In this review, transistor-based synaptic devices are analyzed by categorizing them into different working mechanisms, and the device fabrication processes and synaptic properties are discussed. Future efforts that could be beneficial to the development of transistor-based synaptic devices in neuromorphic computing are proposed.

materials science, multidisciplinary,crystallography
Organic Synaptic Transistors: The Evolutionary Path from Memory Cells to the Application of Artificial Neural Networks

Lin Shao,Yan Zhao,Yunqi Liu

DOI: https://doi.org/10.1002/adfm.202101951

IF: 19

2021-04-29

Advanced Functional Materials

Abstract:The progress of neural synaptic devices is experiencing an era of explosive growth. Given that the traditional storage system has yet to overcome the von Neumann bottleneck, it is critical to develop hardware with bioinspired information processing functions and lower power consumption. Transistors based on 2D materials, metal oxides, and organic materials have been adopted to mimic the synapse of a human brain, due to their high plasticity, parallel computing, integrated storage, and system information processing. Among these materials used to build transistors, organic semiconductors are considered to be the most promising candidate for neural synaptic devices and bio‐electronics, owing to their easy processing, mechanical flexibility, low cost, good bio‐compatibility, and ductility. This review focuses on the recent advances in organic synaptic devices with various structures, materials, and working mechanisms. The applications of artificial neural networks that integrate multiple organic synaptic transistors are also concretely discussed. Finally, the challenges that organic synaptic devices currently face are discussed and future developments are forecast.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Synaptic devices based on field-effect transistors

Shilei Dai,Dandan Hao,Shaojiang Chen,Jia Huang

DOI: https://doi.org/10.1016/b978-0-12-819717-2.00006-0

2020-01-01

Abstract:Transistor-based artificial synapses have been paid much attention in recent years because of their good stability, clear operation mechanism, possibility of multiterminal operation, and can be constructed from a variety of materials. In addition, they can perform concurrent learning to perform synaptic weight updates without interrupting the signal transmission process. Through proper material selection and structural design, transistors can convert external stimulus (light, pressure, temperature, etc.) into the electrical signal, which provides the possibility of implementing sensory synapses with sensorimotor functions as well as achieving synergistic control of one device by two or more signals. However, the development of transistor-based artificial synapses is still in its very early stages. Herein, this article presents a review of recent advances in transistor-based artificial synapses in order to give a guideline for future implementation of synaptic functions with transistors.
Novel Type of Synaptic Transistors Based on a Ferroelectric Semiconductor Channel

Bin Tang,Sabir Hussain,Rui Xu,Zhihai Cheng,Jianhui Liao,Qing Chen

DOI: https://doi.org/10.1021/acsami.9b23595

2020-06-03

Abstract:Three-terminal synaptic transistors are basic units of neuromorphic computing chips, which may overcome the bottleneck of conventional von Neumann computing. So far, most of the three-terminal synaptic transistors use the dielectric layer to change the state of the channel and mimic the synaptic behavior. For this purpose, special dielectric layers are needed, such as ionic liquids, solid electrolytes, or ferroelectric insulators, which are difficult for miniaturization and integration. Here, we report a novel type of synaptic transistors using a two-dimensional ferroelectric semiconductor, i.e., α-In2Se3, as the channel material to mimic the synaptic behavior for the first time. The essential synaptic behaviors, such as single-spike response, paired-spike response, and multispike response have been experimentally demonstrated. Most importantly, the conventional gate dielectric material of our transistors may facilitate the miniaturization and batch manufacture of synaptic transistors. The results indicate that the three-terminal synaptic transistors based on two-dimensional ferroelectric semiconductors are very promising for neuromorphic systems.
Synaptic Plasticity Modulation and Coincidence Detection Emulated in Multi-Terminal Neuromorphic Transistors

Rui Liu,Yongli He,Shanshan Jiang,Longcheng Wang,Qing Wan

DOI: https://doi.org/10.1016/j.orgel.2021.106125

IF: 3.868

2021-01-01

Organic Electronics

Abstract:Human brain is a powerful biological computer that can processing a large number of cognitive tasks simultaneously. Inspired by our brain, many emerging devices have been developed for neuromorphic computing and perception in recent years. Due to the interfacial electron/ion coupling, electric-double-layer (EDL) transistors gated by electrolytes are promising candidates for neuromorphic devices. Here, we demonstrate a multi-terminal indium-tin-oxide (ITO)-based EDL transistor gated by chitosan electrolyte and this device exhibits good electrical properties. Short-term synaptic plasticity modulation and neuron functions (temporal integration, coincidence detection) are investigated. Our results indicate that oxide-based EDL transistors are promising for neuromorphic application.
Light Stimulated IGZO-Based Electric-Double-Layer Transistors for Photoelectric Neuromorphic Devices

Yi Yang,Yongli He,Sha Nie,Yi Shi,Qing Wan

DOI: https://doi.org/10.1109/led.2018.2824339

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:Inspired by the neocortex of the human brain, neuromorphic systems are favorable for processing a variety of complex tasks, such as recognition, prediction, and optimization. To build such an intelligent system, neuromorphic devices are in high demand. Here, photoelectric neuromorphic devices based on pulse light-stimulated low-voltage indium-gallium-zinc-oxide electric-doublelayer transistors were investigated. Such devices can mimic some important synaptic behaviors, such as excitatory post-synaptic potentials, paired-pulse facilitation, and long-term plasticity in the form of photonic excitatory post-synaptic potentials. At last, depression mode to potentiation mode transition was also demonstrated by gate voltage modulation. Our photoelectric neuromorphic devices are interesting for photonic neuromorphic systems.
Low-Voltage Synaptic Transistors Based on PrO$_{\textit{x}}$/ZrO$_{\text{2}}$ Bilayer Dielectric for Neuromorphic Computing

Guangtan Miao,Limeng Chen,Ranran Ci,Zezhong Yin,Dandan Hao,Guoxia Liu,Fukai Shan

DOI: https://doi.org/10.1109/ted.2024.3362310

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:The stimulation of synaptic behavior through artificial synaptic devices is considered as the first step toward hardware implementation of neuromorphic computing systems. However, synaptic transistors based on solid-state oxides are currently underexploited. In this article, In $_{\text{2}}$ O $_{\text{3}}$ synaptic transistors based on PrO $_{{\textit{x}}}$ /ZrO $_{\text{2}}$ bilayer dielectric fabricated by spin coating were proposed, and the synaptic functions were realized by using the trapping and detrapping of the charges at the trap centers in PrO $_{{\textit{x}}}$ . By modulating the presynaptic spiking, synaptic behaviors, including excitatory/inhibitory postsynaptic currents, the transition from short-term plasticity to long-term plasticity, paired-pulse facilitation (PPF), and high-pass filtering characteristics, were simulated. Furthermore, the potentiation/depression of the conductance was demonstrated at low operating voltages ( $-$ 2/0.5 V) and exhibited high stability. Finally, the high recognition accuracy (91.8%) of the synaptic transistors was achieved by the MNIST dataset handwritten digits training. This study provides an effective strategy for the design of solid-state oxide synaptic transistors.

engineering, electrical & electronic,physics, applied
Electret-Based Organic Synaptic Transistor for Neuromorphic Computing.

Rengjian Yu,Enlong Li,Xiaomin Wu,Yujie Yan,Weixin He,Lihua He,Jinwei Chen,Huipeng Chen,Tailiang Guo

DOI: https://doi.org/10.1021/acsami.9b22925

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Neuromorphic computing inspired by the neural systems in human brain will overcome the issue of independent information processing and storage. An artificial synaptic device as a basic unit of a neuromorphic computing system can perform signal processing with low power consumption, and exploring different types of synaptic transistors is essential to provide suitable artificial synaptic devices for artificial intelligence. Hence, for the first time, an electret-based synaptic transistor (EST) is presented, which successfully shows synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation/depression, long-term memory, and high-pass filtering. Moreover, a neuromorphic computing simulation based on our EST is performed using the handwritten artificial neural network, which exhibits an excellent recognition accuracy (85.88%) after 120 learning epochs, higher than most reported organic synaptic transistors and close to the ideal accuracy (92.11%). Such a novel synaptic device enriches the diversity of synaptic transistors, laying the foundation for the diversified development of the next generation of neuromorphic computing systems.
Advanced synaptic transistor device towards AI application in hardware perspective

Chun Zhao,Tianshi Zhao,Yixin Cao,Yina Liu,Li Yang,Ivona Z Mitrovic,Eng Gee Lim,Ce Zhou Zhao

DOI: https://doi.org/10.1109/icicdt51558.2021.9626511

2021-09-15

Abstract:For the past decades, the synaptic devices for the inmemory computing have been widely investigated due to the high-efficiency computing potential and the ability to mimic biological neurobehavior. However, the conventional twoterminal synaptic memristors show drawbacks of resistance reduction caused by large-scale paralleling and asynchronous storage-reading process, which limit its development. Recently, researchers have paid attention to the transistor-like artificial synapse. Due to the existence of insulator layer and the separation of input and read terminals, the three-terminal synaptic transistors are believed to have greater potential towards artificial intelligence (AI) application fields. In this work, a summary of recent progresses and the future challenges of synaptic transistors are discussed.
Recent Progress on Emerging Transistor‐Based Neuromorphic Devices

Yongli He,Li Zhu,Ying Zhu,Chunsheng Chen,Shanshan Jiang,Rui Liu,Yi Shi,Qing Wan

DOI: https://doi.org/10.1002/aisy.202000210

IF: 7.298

2021-01-01

Advanced Intelligent Systems

Abstract:Human brain outperforms the current von Neumann digital computer in many aspects, such as energy efficiency and fault‐tolerance. Inspired by human brain, neuromorphic computation has attracted increasing research interest. In recent years, emerging neuromorphic devices are widely developed for neuromorphic computing. Herein, the recent progress on transistor‐based neuromorphic devices is presented. First, a brief introduction of biological synaptic and neuronal functions is given. Then operation principles and latest progress in neuromorphic transistors, including ion‐gate neuromorphic transistors, ferroelectric‐gate neuromorphic transistors, and floating‐gate neuromorphic transistors, are reviewed and discussed. At last, conclusions and prospects are given.

Electric-double-layer Transistors for Synaptic Devices and Neuromorphic Systems

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Electric Double Layer Transistors Based on 2-D Electron Gases Operated at a Low Voltage for Synaptic Devices

High-temperature-resistant Synaptic Transistors for Neuromorphic Computing

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

Synaptic Transistors and Neuromorphic Systems Based on Carbon Nano-Materials

Emerging Synaptic Devices: from Two-Terminal Memristors to Multiterminal Neuromorphic Transistors

Oxide-Based Synaptic Transistors for Neuromorphic Systems

(Invited) Multi-Terminal Oxide-based Electric-Double-Layer Thin-Film Transistors for Neuromorphic Systems

Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application

Dielectric Engineered Two-Dimensional Neuromorphic Transistors

Transistor-Based Synaptic Devices for Neuromorphic Computing

Organic Synaptic Transistors: The Evolutionary Path from Memory Cells to the Application of Artificial Neural Networks

Synaptic devices based on field-effect transistors

Novel Type of Synaptic Transistors Based on a Ferroelectric Semiconductor Channel

Synaptic Plasticity Modulation and Coincidence Detection Emulated in Multi-Terminal Neuromorphic Transistors

Light Stimulated IGZO-Based Electric-Double-Layer Transistors for Photoelectric Neuromorphic Devices

Low-Voltage Synaptic Transistors Based on PrO$_{\textit{x}}$/ZrO$_{\text{2}}$ Bilayer Dielectric for Neuromorphic Computing

Electret-Based Organic Synaptic Transistor for Neuromorphic Computing.

Advanced synaptic transistor device towards AI application in hardware perspective

Recent Progress on Emerging Transistor‐Based Neuromorphic Devices