Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices

Xiangde LinYonghai LiYanqiang LeiQijun Suna Department of Research,Zhoupu Hospital Affiliated to Shanghai University of Medicine & Health Sciences,Shanghai,Chinab Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing,Chinac Center on Nanoenergy Research,School of Chemistry and Chemical Engineering,Guangxi University,Nanning,China
DOI: https://doi.org/10.1080/19475411.2024.2306837
2024-01-31
International Journal of Smart and Nano Materials
Abstract:Electric double layer (EDL) gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects. A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density (~μF cm −2 ). Recently, EDL gating technique, as an interfacial gating, is widely used in two-dimensional (2D) crystals for various sophisticated materials characterization and device applications. This review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection, sensing, logic circuits, and neuromorphic computation.
materials science, multidisciplinary
What problem does this paper attempt to address?