Abstract:Synergic integration of presynaptic inputs from the dendrites plays an important role for sensory information process and cognitive computation, and the idea of building bio-inspired solid-state devices has been around for decades. In 1992, Shibata et al proposed the Si-based neuron transistors with multiple input gates that are capacitively coupled to a floating gate . The “on” or “off” state of the neuron transistors depends on the integrated effect of the multiple input gates. One of the unique features of the neuron transistors is the ultralow power dissipation during the calculation due to the gate-level sum operation in a voltage mode. From then on, Si-based neuron transistors have attracted much attention for chemical and biological detection due to the easy adjustment of threshold voltage. But, up to now, electrolyte-gated neuron transistors with amorphous oxide channel layers for biochemical sensing applications are not reported. For portable applications, low-voltage operation is preferred. Electrolyte gated electric-double-layer (EDL) transistors can act as potential candidates with a low operation voltage due to the strong EDL modulation at the electrolyte/channel interface. Recently, oxide-based EDL transistors gated by solid-state inorganic electrolytes were proposed by our group. At the same time, artificial synapses and neuron transistors with low power consumption and fundamental biological functions were mimicked in individual device. The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, inspired by the dendritic integration and spiking operation of a biological neuron, oxide-based neuron transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When the neuron transistor sensor is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH, which is higher than the Nernst limit. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. At last, we find that appropriate depression applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuron transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.

Enhancing the Ph Sensitivity by Laterally Synergic Modulation in Dual-Gate Electric-Double-Layer Transistors

Recent Advances in Electric-Double-Layer Transistors for Bio-Chemical Sensing Applications

Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Multi-gate Synergic Modulation in Laterally Coupled Synaptic Transistors

Flexible Sensory Platform Based on an Electrolyte-Gated Oxide Neuron Transistor

(Invited) Oxide Neuron Transistor for High-Performance Biochemical Sensors

Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors

TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit

Impact of Gate Structure on the Electrophysiology Detection Behaviors for SOI Ion-Sensitive FETs

Enhanced Ph Sensitivity of AlGaN/GaN Ion-Sensitive Field Effect Transistor with Al2O3 Synthesized by Atomic Layer Deposition

Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm

Approaching the Nernst Detection Limit in an Electrolyte-Gated Metal Oxide Transistor

Liquid-solid Dual-gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Ph-Dependent Plasticity Regulation in Proton/electron Hybrid Oxide-Based Synaptic Transistors

Fabrication of a Mesoporous Multimetallic Oxide-based Ion-Sensitive Field Effect Transistor for Ph Sensing.

Interface Engineering of Metal-Oxide Field-Effect Transistors for Low-Drift pH Sensing

Dual-liquid-gated electrochemical transistor and its neuromorphic behaviors

Low-Cost pH Sensors Based on Low-Voltage Oxide-Based Electric-Double-Layer Thin Film Transistors

Subthreshold Regime Has the Optimal Sensitivity for Nanowire Fet Biosensors

Normally off AlGaN/GaN Ion-Sensitive Field Effect Transistors Realized by Photoelectrochemical Method for Ph Sensor Application