Abstract:This paper proposes an electrochemical-induced hydrogen passivation (CHP) method to improve the field emission performance of the multilayered porous silicon (MPS)-based electron source. We show that CHP treatment enhances the surface morphology of MPS and compensates for inefficient oxidation in the top half of the MPS layer caused by electrochemical oxidation (ECO), achieving complete and uniform oxidation properties for continuous electron acceleration. The measurement results demonstrate that this simple and convenient method significantly enhances the emission current and efficiency, while also improving the repeatability and stability of the MPS-based electron source. Therefore, CHP is a valuable method to enhance the cold emission properties of MPS-based electron sources, making it a promising on-chip electron emitter in vacuum electronic devices.

Improvement of Field Emission Performance of Multilayered Porous Silicon-Based Electron Source Through Hydrogen Passivation