Abstract:The increasing demand for designing and manufacturing micro parts with high quality comes from the high speed development of micro electromechanical systems (MEMS) and nano electromechanical systems (NEMS) in recent years. Nanometric cutting as an important machining way of micro parts has become a hot spot in machining field. Some main issues in nanometric cutting such as chip formation, machined surface quantity and diamond tool wear etc., have been investigated by molecular dynamics. Previous researchers have pointed out that, the generation and evolution of defects are mainly, responsible for causing plastic deformation of machined workpiece in nanometric cutting of plastic materials and a high compressive stress remaining in shear zone is considered beneficial to ductile-mode machining of brittle materials. Up to now, however, the influence of cutting thickness on defect behaviors and stress distribution in a workpiece and the relationship between them for single crystal materials are still unclear. In the present study, molecular dynamics simulations of nanometric cutting of single crystal Cu were performed. The simulation results show that stacking fault and partial dislocation are two main types of the defects in workpieces. A high surface stress at the atomic scale was observed in workpieces and there exist the compressive stress in shear zones and tensile stresses in the machined surfaces. It is found that the stress-distance curves of workpieces present a clear periodicity corresponding to the generation and evolution of dislocations in them. At the beginning of cutting (a small cutting thickness), no apparent stacking faults inside workpieces have been found, but with the increase of cutting thickness, the defects on surfaces and subsurfaces increase significantly and the thicker the cutting thickness, the smaller the corresponding stress components.

Study of Stress-Assisted Nano-Cutting Mechanism of Gallium Arsenide

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Subsurface Deformation Mechanism in Nano-cutting of Gallium Arsenide Using Molecular Dynamics Simulation

Study on the crack formation mechanism in nano-cutting of gallium arsenide

An Atomistic Investigation on the Wear of Diamond During Atomic Force Microscope Tip-Based Nanomachining of Gallium Arsenide

Study on the Processing Outcomes of the Atomic Force Microscopy Tip-Based Nanoscratching on GaAs

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Oblique Nanomachining of Gallium Arsenide Explained Using AFM Experiments and MD Simulations

Research on Mechanism of Nanoscale Cutting with Arc Trajectory for Monocrystalline Silicon Based on Molecular Dynamics Simulation

Atomic Simulation of Effect of Stress-Relief Annealing on the Regulation of Residual Stress in Nano-cutting of γ-TiAl Alloy

Atomic simulation study on the effect of defects on nano-cutting mechanism of single crystal copper

Stress Distribution in Silicon Subjected to Atomic Scale Grinding with a Curved Tool Path.

Influence of crystallographic effect on tool wear, cutting stress, cutting temperature, cutting force and subsurface damage in nano cutting of single crystal silicon carbide

MOLECULAR DYNAMICS SIMULATION OF NANOMETRIC CUTTING CHARACTERISTICS OF SINGLE CRYSTAL Cu

Atomistic Simulation Study of Nanoparticle Effect on Nano-Cutting Mechanisms of Single-Crystalline Materials

Deformation and removal mechanism of single crystal gallium nitride in nanoscratching

A Simulated Investigation of Ductile Response of GaAs in Single-Point Diamond Turning and Experimental Validation

Simulation Study of Material Deformation in Monocrystal Silicon Nano-Machining

Study on nanometer cutting mechanism of single crystal silicon at different temperatures

Towards Understanding the Machining Mechanism of the Atomic Force Microscopy Tip-Based Nanomilling Process

Research on Nano-Cutting Processes Based on Parallel Molecular Dynamics