Abstract:This article presents a datasheet-driven empirical model of silicon carbide (SiC) MOSFET, in which both the static ${I}$ – ${V}$ and dynamic ${C}$ – ${V}$ characteristics are accurately captured by using nonsegmented empirical equations. Compared with the existing models, this model features on describing the first quadrant conduction ${I}$ – ${V}$ characteristics through nonsegmented empirical equations while considering the intrinsic physical mechanisms, which is beneficial for improving the convergence capability. Moreover, the nonlinear Miller capacitance ${C}_{gd}$ is accurately captured considering the shielding effect caused by the adjacent p-wells. Apart from the abovementioned added features, a parameter extraction procedure is also proposed, in which all the parameter values could be directly extracted from the data provided in the commercial datasheet. The accuracy of the proposed model is verified through the comparisons between the modeling results and experimental data from the datasheet. Furthermore, the convergence capability of the proposed model is verified by simulating a seven-level cascaded H-bridge (CHB) inverter, in which 12 devices are included. The experimental double pulse test is finally carried out to verify the feasibility of the proposed model in simulating the dynamic transients.

A Semi-Physical Model of SiC MOSFETs for Improved Static Characteristic

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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

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Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Modeling of Sic Mosfet in Matlab/Simulink

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A Non-Segmented PSpice Model of SiC MOSFETs

A Non-Segmented PSpice Model of SiC MOSFET with Temperature-Dependent Parameters

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

A Modified General Model for Sic Power MOSFET in Rail Transportation Application

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

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