Multistate Magnetic Tunnel Junction Based on a Single Two-Dimensional Van Der Waals Antiferromagnet

Jie Yang,Baochun Wu,Sichun Zhao,Shiqi Liu,Jing Lu,Shunfang Li,Jinbo Yang
DOI: https://doi.org/10.1103/physrevapplied.22.014017
IF: 4.6
2024-01-01
Physical Review Applied
Abstract:Antiferromagnets are emerging as promising competitors for advanced multistate memories because of their ignorable stray fields, ultrafast resonance dynamics and, especially, the rich variety of spin-order responses. Motivated by the determination of stripy intralayer antiferromagnetic order and the exceptional ambient stability of two-dimensional (2D) CrOCl, we here propose a single-basement magnetic tunnel junctions (MTJs) composed of 2D intralayer antiferromagnets and predict the spin-resolved transport properties represented by Ag/CrOCl/Ag MTJs. Using ab initio quantum-transport simulations, four different resistance states are demonstrated in 2D CrOCl-based MTJs with the magnetic order of CrOCl evolving from antiferromagnetism, followed by different metamagnetic arrangements and, finally, to ferromagnetism. The resistance area is remarkably low (only 0.02-0.2 Q mu m2) in the Ag/monolayer CrOCl/Ag MTJ, indicating high energy efficiency. The calculated tunneling magnetoresistance generated between any magnetic order and the ground antiferromagnetic order reaches an impressive range of 110% to 900% and 410% to 48000% for the monolayer and bilayer CrOCl-based MTJ, respectively, at zero bias and decreases as the bias increases. Our work also provides an insightful idea for using metamagnetic transitions and the related multiple conductance effect in 2D intralayer antiferromagnets, which paves a new way for future nonvolatile energy-efficient multiple-state memory devices.
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