Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect

Pingfan Gu,Cong Wang,Dan Su,Zehao Dong,Qiuyuan Wang,Zheng Han,Kenji Watanabe,Takashi Taniguchi,Wei Ji,Young Sun,Yu Ye

DOI: https://doi.org/10.1038/s41467-023-39004-4

IF: 16.6

2023-06-03

Nature Communications

Abstract:Abstract A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalities by electrical means. The demand for expanding the boundaries of data storage and processing technologies has led to the development of spintronics toward two-dimensional (2D) platforms. This work reports the ME effect in the 2D stripy antiferromagnetic insulator CrOCl down to a single layer. By measuring the tunneling resistance of CrOCl on the parameter space of temperature, magnetic field, and applied voltage, we verified the ME coupling down to the 2D limit and probed its mechanism. Utilizing the multi-stable states and ME coupling at magnetic phase transitions, we realize multi-state data storage in the tunneling devices. Our work not only advances the fundamental understanding of spin-charge coupling, but also demonstrates the great potential of 2D antiferromagnetic materials to deliver devices and circuits beyond the traditional binary operations.

multidisciplinary sciences

What problem does this paper attempt to address?

The problem this paper attempts to address is the development of a multi-state data storage technology based on the two-dimensional striped antiferromagnetic material CrOCl. Specifically, the researchers utilized the magnetoelectric effect (ME effect) to achieve multi-state data storage in CrOCl and demonstrated the potential of this material in low-power, high-density, non-volatile memory.

### Background
- **Magnetoelectric Effect**: The magnetoelectric effect refers to the coupling between magnetic order and electric order in a material, allowing the manipulation of magnetic states through an electric field and vice versa.
- **Antiferromagnetic Materials**: Antiferromagnetic materials have zero net magnetization but have an ordered arrangement of internal magnetic moments, making them insensitive to external magnetic field interference, with high stability and fast dynamic characteristics.
- **Two-Dimensional Materials**: Two-dimensional materials have received widespread attention in recent years due to their unique physical properties and potential applications. CrOCl is an air-stable two-dimensional antiferromagnetic insulator with a striped antiferromagnetic ground state.

### Research Objectives
- **Achieve Multi-State Data Storage**: Achieve multi-state data storage in CrOCl through the magnetoelectric effect, i.e., switching between different magnetic and electric phases to achieve multiple stable states.
- **Understand Fundamental Physical Mechanisms**: Explore the fundamental physical mechanisms of magnetoelectric coupling in CrOCl, particularly the behavior of antiferroelectric dipoles between different magnetic and electric phases.
- **Develop New Storage Devices**: Demonstrate the application potential of CrOCl in low-power, high-density, non-volatile memory, providing new ideas for the design of future electronic devices.

### Main Achievements
- **Verification of Magnetoelectric Effect**: Verified the magnetoelectric coupling effect in CrOCl at the two-dimensional limit through tunneling resistance measurements.
- **Multi-State Data Storage**: Achieved multi-state data storage in CrOCl tunneling devices using magnetoelectric coupling, demonstrating continuously tunable output states.
- **Explanation of Physical Mechanisms**: Explained the tilting mechanism of antiferroelectric dipoles in CrOCl through theoretical calculations and experimental measurements, and how this mechanism leads to multi-state data storage.

### Significance
- **Advancing Basic Research**: This research not only deepens the understanding of spin-charge coupling but also provides experimental evidence for exploring new physical phenomena in two-dimensional antiferromagnetic materials.
- **Practical Application Potential**: Demonstrated the application potential of CrOCl in low-power, high-density, non-volatile memory, providing a new direction for future information storage technology.

In summary, this paper successfully achieved multi-state data storage by studying the magnetoelectric effect in CrOCl and provided important theoretical and experimental foundations for the development of new electronic devices.