Full-Electrical Writing and Reading of Magnetization States in a Magnetic Junction with Symmetrical Structure and Antiparallel Magnetic Configuration

Junwei Tong,Yanzhao Wu,Rui Zhang,Lianqun Zhou,Gaowu Qin,Fubo Tian,Xianmin Zhang
DOI: https://doi.org/10.1021/acsnano.1c03821
IF: 17.1
2021-07-06
ACS Nano
Abstract:Full-electrical writing and reading of magnetization states are vital for the development of next-generation spintronic devices with high density and ultralow-power consumption. Here, we proposed a method to realize the full-electrical writing and reading of magnetization states <i>via</i> a structural design, which only requires a symmetrical device structure and an antiparallel magnetic configuration. CrBr<sub>3</sub>, h-BN, and 1T-MnSe<sub>2</sub> were selected to construct the device of CrBr<sub>3</sub>/h-BN/1T-MnSe<sub>2</sub>/h-BN/CrBr<sub>3</sub>, where the magnetization of two CrBr<sub>3</sub> layers was fixed to the antiparallel state. By changing the direction and magnitude of the applied electric field, it is proved that the magnetization of 1T-MnSe<sub>2</sub> could be reversed. Moreover, the device energies before and after the magnetization reversal are the same when the applied electric field is removed due to the structural symmetry. Meanwhile, the magnetic anisotropy energy of 1T-MnSe<sub>2</sub> could induce an energy barrier, to guarantee the nonvolatile magnetization reversal in the present device. In addition, the tunnel magnetoresistance ratio was found up to 421%, showing a promising application to full-electrically write and read magnetization in spintronics. The present study likely promotes the development of full-electrical and ultralow-power spintronics devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03821?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03821</a>.Detailed description of the structures for the devices; relative energies of different stackings for CrBr<sub>3</sub>/h-BN, h-BN/1T-MnSe<sub>2</sub>, and CrBr<sub>3</sub>/Gr; DOSs of each material in the CrBr<sub>3</sub>/h-BN/1T-MnSe<sub>2</sub>/h-BN/CrBr<sub>3</sub> device; enlarged DOSs of 1T-MnSe<sub>2</sub> under the different electric fields in both devices (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03821/suppl_file/nn1c03821_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
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