Abstract:We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are observed depending on the crystallization temperature: local drilling and long-range etching. In local drilling occurring at temperatures of ≤500 °C, the In droplet locally liquefies the InP underneath and the P atoms can easily diffuse out of the droplet to the edges. During crystallization, the As atoms diffuse into the droplet and crystallize at the solid–liquid interface, forming an InAs etch pit underneath the QD. In long-range etching, occurring at higher temperatures of >500 °C, the InP layer is destabilized and the In atoms from the surroundings migrate toward the droplet. The P atoms can easily escape from the surface into the vacuum, forming trenches around the QD. We show for the first time the formation of trenches and long-range etching in InAs/InP QDs with atomic resolution. Both etching processes can be suppressed by growing a thin layer of InGaAs prior to the droplet deposition. The QD composition is estimated by finite element modeling in combination with X-STM. The change in the morphology of QDs due to etching can strongly influence the fine structure splitting. Therefore, the current atomic-resolution study sheds light on the morphology and etching behavior as a function of crystallization temperature and provides a valuable insight into the formation of InAs/InP droplet epitaxy QDs which have potential applications in quantum information technologies.

Study on the asymmetry of nanopore in Al droplet etching

Morphological engineering of aluminum droplet etched nanoholes for symmetric GaAs quantum dot epitaxy

Fabrication of in Situ Ultrathin Anodic Aluminum Oxide Layers for Nanostructuring on Silicon Substrate

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Long-Range-Ordered Ag Nanodot Arrays Grown on Gaas Substrate Using Nanoporous Alumina Mask

Properties and stability of atomic layer deposition modified track-etched single conical nanopore

A Method of Controlling the Hole Size of Nanopores Array on Anodic Aluminum Oxide

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Shape Formation Analysis of Silicon Nanopore Fabricated by Anisotropic Wet Etching Method

Ordering and Modification of Nanopores in Porous Anodic Aluminum Membranes

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

High Aspect Ratio Etching of Nanopores in PECVD SiC Through AAO Mask

Afm Study of Quasi-Ordered Stripe-Like Nanostructures on Surfaces of Aluminum

Surface Engineering of Synthetic Nanopores by Atomic Layer Deposition and Their Applications

Study on the Preparation of Nanoporous Anodic Alumina Membrane for Microsensor

Atomic-Layer-Deposition Assisted Formation of Wafer-Scale Double-Layer Metal Nanoparticles with Tunable Nanogap for Surface-Enhanced Raman Scattering

Fine structure of bright and dark excitons in asymmetric droplet epitaxy GaAs/AlGaAs quantum dots

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Characterization of nanopores arrangement of anodic alumina layers synthesized on low-(AA1050) and high-purity aluminum by two-step anodizing in sulfuric acid with addition of ethylene glycol at low temperature

Defects analysis in self-organized nanopore arrays formed by anodization of aluminium at various temperatures