Forming a Disordered Atomic Layer to Bond TiN or AlN Ceramic with Sn9Zn Metal under Ultrasonication

Zhiwu Xu,Shu Chen,Zhengwei Li,Zhongwei Ma,He Zhang,Jiuchun Yan

DOI: https://doi.org/10.1016/j.jmapro.2024.06.003

2024-01-01

Abstract:A disordered atomic layer instead of traditional intermetallic compounds is formed in the bonding interface of ceramic and metal in the metallization of ceramics under ultrasonication. A deep understanding of the bonding mechanism between poor-wetted ceramics and low-temperature metals remains limited with regard to high metallization efficiency and nanoscale bonding structure. In this work, the metallization of AlN and TiN ceramics was realized using Sn-9Zn metal with the aid of ultrasonication. The microstructure, energy, and element sources of the ceramic/metal interface were analyzed. Results show that a nanoscale amorphous layer is formed between the ceramics and the metal, and this layer can bond easily with AlN or TiN and Sn-9Zn because of the irregular arrangement of its atoms. Some dispersed nanocrystals are also present in the amorphous bonding layer. The thermal effect of ultrasonic cavitation produces a high temperature above 106 K, which provides the energy for the bonding of AlN or TiN with Sn-9Zn. O and Zn accumulate in the Sn-9Zn/AlN bonding layer. Zn originates from Sn-9Zn. O could be from the O2 dissolved in the liquid solder or the O2 adhering to the ceramic. A small amount of AlN decomposes because of its high Delta G of decomposition. However, TiN decomposes into Ti and N2 under the extreme condition caused by ultrasonic cavitation. The accumulated Ti in the Sn-9Zn/TiN bonding layer originates from TiN. The source of the accumulated O is the same as that of Sn-9Zn/AlN bonding layer.