Preparation of LiNbO3 Thin Film on Insulator for High-Performance Lithium Niobate Devices

Rui Huang,Xin Zhang,Mingzhi Tang,Rui Li,Hao Xu,Yecai Guo,Zhiyong Wang
DOI: https://doi.org/10.1016/j.vacuum.2024.113353
IF: 4
2024-01-01
Vacuum
Abstract:The combination of ion-slicing and direct wafer bonding technology is a very promising method for transferring thin film material to cheap substrates. In this study, the evolution of internal defects and the thin film exfoliation process of He ion-implanted into LiNbO3 crystal were studied based on ion-slicing technology. Then, based on the Ar plasma-activated bonding process, the LiNbO3 thin film was transferred to the amorphous SiO2 (a-SiO2) layer. In addition, the bonding model of LiNbO3/a-SiO2/Si was established through finite element analysis, and the distribution curves of deformation and interfacial thermal stress with annealing temperature were obtained. After wet etching and proton exchange processes, the prepared LNOI substrate was successfully etched into a Y-shaped branching waveguide on the surface. The LNOI substrate prepared by this work can meet the practical application requirements of thin film LiNbO3 devices.
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