Abstract:Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo 2 I 3 Br 3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo 2 I 3 Br 3 . We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo 2 I 3 Br 3 , respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo 2 I 3 Br 3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo 2 I 3 Br 3 , transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo 2 I 3 Br 3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.

Structural Phase Transition and Electronic Properties of Two-Dimensional NbOI2

Structural phase transition and electronic properties of two-dimensional

Shear Band Mediated Ω Phase Transformation in Nb Single Crystals Deformed at 77 K

In-plane anisotropic mechanical properties of two-dimensional NbOI2

Strain-Induced Isostructural and Magnetic Phase Transitions in Monolayer MoN2

Giant electro-optic and elasto-optic effects in ferroelectric NbOI$_{2}$

Enhanced Carrier Lifetime and Mobility in Monolayer NbOI2

2D NbOI 2 : A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping

Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4.

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Strain-tunable magnetic and electronic properties of monolayer CrI 3 .

First-Principles Study of Localised and Delocalised Electronic States in Crystallographic Shear Phases of Niobium Oxide

Reconciling the theoretical and experimental electronic structure of NbO2

First-principles studies of strain-tunable InN monolayer: Applications for switching and optoelectronic devices

Strain-tunable phase transition and doping-induced magnetism in iodinene

First principles study of two-dimensional high-temperature antiferromagnetic semiconductor MoICl<sub>2</sub> under strain effect

Strain-tunable magnetic and magnonic states in Ni-dihalide monolayers

Highly anisotropic mechanical and optical properties of 2D NbOX2 (X = Cl, Br, I) revealed by first-principle

First principles study of two-dimensional high-temperature antiferromagnetic semiconductor MoICl2 under strain effect

Strain-Induced Structural Phase Transitions in Epitaxial (001) BiCoO3 Films: A First-Principles Study