Abstract:Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo 2 I 3 Br 3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo 2 I 3 Br 3 . We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo 2 I 3 Br 3 , respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo 2 I 3 Br 3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo 2 I 3 Br 3 , transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo 2 I 3 Br 3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.

First principles study of two-dimensional high-temperature antiferromagnetic semiconductor MoICl<sub>2</sub> under strain effect

First principles study of two-dimensional high-temperature antiferromagnetic semiconductor MoICl2 under strain effect

Strain-tunable magnetic and electronic properties of monolayer CrI 3 .

First Principles Study in Two-Dimensional Antiferromagnetic Mn2Cl8 with Strain-Controllable and Hydrogenation

Ferromagnetic InMoTe3 monolayer with strain-modulated magnetic interactions and Curie temperature

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Two-dimensional Antiferromagnetic Semiconductor T’-MoTeI from First Principles

Effects Of External Magnetic Field And Out-Of-Plane Strain On Magneto-Optical Kerr Spectra In Cri3 Monolayer

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Magnetic Phase Transition in strained two-dimensional semiconductor MoTeI Monolayer

Strain Tunable Intrinsic Ferromagnetic in 2D Square CrBr$_2$

A First-Principle Study of Monolayer Transition Metal Carbon Trichalcogenides

Strain Controlling Transport Properties of Heterostructure Composed of Monolayer CrI3

Modulation of Electronic and Magnetic Properties of Monolayer Chromium Trihalides by Alloy and Strain Engineering

Bipolar ferromagnetic semiconductors and doping-tuned room-temperature half-metallicity in monolayer Mo X 3 ( X = Cl , Br , I ) : An HSE06 study

Strain-tunable magnetic and magnonic states in Ni-dihalide monolayers

Monolayer Chromium Dichloride: an Anti-Ferromagnetic Semiconductor with a High Néel Temperature above Room Temperature

Band gap modulation and photoelectric properties of two-dimensional CrI 3 nanosheets: A first-principles study

Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study

Electronic structure and magnetism manipulation of non-metal-doped monolayer chromium disulfide under strain