Basic principles of electrohaemodynamics.

L. Djordjevich,M. Sadove

DOI: https://doi.org/10.1016/0141-5425(81)90101-1

Journal of Biomedical Engineering

Abstract:

What problem does this paper attempt to address?

Enhanced Carrier Lifetime and Mobility in Monolayer NbOI 2

Guitao Zhang,Tingbo Zhang,Qian Xia,Qian Chen,Jinlan Wang

DOI: https://doi.org/10.1021/acs.jpclett.4c02443

IF: 6.888

2024-09-26

The Journal of Physical Chemistry Letters

Abstract:The lifetime and mobility of hot carriers are critical parameters for assessing the performance of optoelectronic materials, as they directly impact the response speed and operational efficiency of devices. Combining first-principles calculations with nonadiabatic molecular dynamics (NAMD) simulations, we systematically investigated the electronic properties and carrier dynamics of monolayer NbOI(2). Our findings indicate that, at room temperature, this material demonstrates a carrier lifetime...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Widely tunable carrier mobility of boron nitride-embedded graphene.

Jinying Wang,Ruiqi Zhao,Zhongfan Liu,Zhirong Liu

DOI: https://doi.org/10.1002/smll.201202978

IF: 13.3

2013-01-01

Small

Abstract:The carrier transport in boron nitride-embedded graphene (BNG) is studied using density functional theory coupled with the Boltzmann transport equation. Under a phonon scattering mechanism, the intrinsic carrier mobility of BNG at room temperature is tunable from 1.7 x 103 to 1.1 x 105 cm2 V1 s1 when the bandgap is between 0.38 and 1.39 eV. Some specific BNG materials even show ultrahigh mobility up to 6.6 x 106 cm2 V1 s1, and the transport polarity (whether it is electron or hole transport) can be tailored by the application of a uniaxial strain. The wide mobility variation of BNG is attributed to the dependence of the effective mass and the deformation potential constant on the carbon concentration and width. The results indicate that BNG can have both a large onoff ratio and high carrier mobility and is thus a promising material for electronic devices.
Structural phase transition and electronic properties of two-dimensional

Guitao Zhang,Qian Chen,Jinlan Wang,and Jinlan Wang

DOI: https://doi.org/10.1103/physrevb.109.184103

2024-05-02

Physical Review B - Condensed Matter and Materials Physics

Abstract:The response to strains is a crucial issue when applying two-dimensional (2D) materials in flexible electronic devices. Utilizing first-principles calculations based on density functional theory, we systematically studied the structural phase transition in niobium oxide diiodide (NbOI2) monolayer and the consequent changes in electronic and magnetic properties. The calculated Young's modulus of the monolayer NbOI2 is approximately 80Nm−1 , and the in-plane Poisson's ratio is less than 0.1. Under uniaxial strain, dissociation of Nb atom dimers occurs, leading to a magnetic phase transition from nonmagnetic to antiferromagnetic states. Moreover, the coupling pattern of magnetic moments exhibits significant anisotropy along different directions with temperature variations. The exchange couplings in two orthogonal crystal directions were analyzed and the Néel temperature was predicted using Monte Carlo simulations. Additionally, the strain also modulates the ferroelectric polarization and switching barriers. A clear physical picture was provided to explain the magnetic and electronic mechanisms in the 2D NbOI2 . This study shows the potential applications of such materials in future flexible microelectronic devices. https://doi.org/10.1103/PhysRevB.109.184103 ©2024 American Physical Society
Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Yu Wu,Bowen Hou,Ying Chen,Jiang Cao,Congcong Ma,Hezhu Shao,Yiming Zhang,Zixuan Lu,Heyuan Zhu,Zhilai Fang,Rongjun Zhang,Hao Zhang

2020-01-01

Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.
Promoting the carrier mobility of Nb2SiTe4 through cation coordination engineering

Weiwei Meng,Zhiguo Nie,Long Lin,Li Huang,Hao Yin,Yuhan Guo,Jijun Qian,Tingting Shi,Feng Hong,Mingzhu Long

DOI: https://doi.org/10.1063/5.0200504

IF: 4

2024-02-19

Applied Physics Letters

Abstract:Ternary two-dimensional (2D) monoclinic Nb2SiTe4 has garnered significant attention for its potential applications in anisotropic photoelectronics. Yet, its intrinsic indirect bandgap nature and low hole mobility, attributed to the short Nb–Nb dimer configurations, hinder the efficient photogenerated carrier separation and transport. In this Letter, using density functional theory calculations, we demonstrate the interlayer intercalation of Si results in the formation of a metastable orthorhombic Nb2SiTe4 structure devoid of detrimental short Nb–Nb dimers. Notably, this Si intercalation leads to a remarkable reduction of hole effective masses of orthorhombic Nb2SiX4 (X = S, Se, and Te), a crucial factor for achieving high carrier mobility. Taking the orthorhombic Nb2SiTe4 monolayer as an example, the calculated hole mobility (>100 cm2 V−1 s−1) is comparable in magnitude to the respectable hole mobility observed in multiple layers of the monoclinic Nb2SiTe4. To simultaneously enhance electron and hole mobility, we establish a van der Waals junction between the monoclinic and orthorhombic Nb2SiTe4 structures, achieving high and comparable carrier mobilities. The Nb2SiTe4 junction exhibits a nearly direct bandgap of 0.35 eV, rendering it suitable for infrared light harvesting. Furthermore, carriers within the Nb2SiTe4 junction become spatially separated across different layers, resulting in an intrinsic built-in electric field, which is superior for efficient photo-generated charge separation and decreases the potential nonradiative carrier recombination. Our findings highlight the impact of cation coordination engineering on the electronic and optical properties of 2D Nb2SiTe4 and provide a feasible solution to achieve better carrier transport in low-dimensional photovoltaic functionalities.

physics, applied
Carrier Mobility in Monolayer IrSCl and IrSI Based on First-Principles Calculations

Zhang Lei,Chen Qi-Hang,Cao Shuo,Qian Ping

DOI: https://doi.org/10.7498/aps.73.20241044

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Carrier mobility is a key parameter determining the response speed of charge carriers to electric fields in nanoelectronic devices. This study aims to explore the charge carrier transport properties of monolayer IrSCl and IrSI. Using first-principles calculations based on density functional theory (DFT), we systematically investigated the electronic structure and transport properties of monolayer IrSCl and IrSI. Phonon dispersion calculations indicate that both IrSCl and IrSI exhibit no imaginary frequencies, confirming their structural stability. Furthermore, molecular dynamics simulations demonstrate that these materials maintain thermal stability at room temperature (300 K). Evaluating the bandgap using the Perdew-Burke-Ernzerhof (PBE) functional and the hybrid HSE06 functional shows that both IrSCl and IrSI are indirect bandgap semiconductors. The bandgap values for monolayer IrSCl are 0.37 eV (PBE) and 1.58 eV (HSE06), while those for monolayer IrSI are 0.23 eV (PBE) and 1.36 eV (HSE06). We further investigated the effects of biaxial tensile strain on the bandgap, revealing that the bandgap of IrSCl and IrSI decreases with increasing strain, reaching 0.05 eV and 0.01 eV (PBE) at a strain of 6%, indicating a strain-induced transition to metallic behavior. Based on deformation potential theory and the Boltzmann transport equation, we calculated the carrier mobilities of monolayer IrSCl and IrSI. The predicted maximum carrier mobility for monolayer IrSCl at room temperature is 407.77 cm 2 V -1 s -1 , while that for monolayer IrSI is 202.64 cm 2 V -1 s -1 . Additionally, results from the Boltzmann transport equation show that the highest mobilities for IrSCl and IrSI are 299.15 cm 2 V -1 s -1 and 286.41 cm 2 V -1 s -1 , respectively. These findings suggest that both IrSCl and IrSI possess favorable electronic and transport properties, making them promising candidates for future applications in two-dimensional nanoelectronic devices. Notably, the combination of a moderate bandgap and high carrier mobility at room temperature indicates their potential use in transistors, sensors, and other electronic components. This study provides valuable insights into the material properties of IrSCl and IrSI, contributing to the design of novel two-dimensional materials for electronic applications.

physics, multidisciplinary
Giant electro-optic and elasto-optic effects in ferroelectric NbOI$_{2}$

Zhenlong Zhang,Xuehan Di,Charles Paillard,Laurent Bellaiche,Zhijun Jiang

2024-08-08

Abstract:First-principles calculations are performed to investigate the electro-optic (EO) and elasto-optic effects of the three-dimensional (bulk) and two-dimensional (monolayer) ferroelectric NbOI$_{2}$. Remarkably large linear EO and elasto-optic coefficients are discovered in both systems, when under stress-free conditions. We further found that the EO responses of bulk and monolayer NbOI$_{2}$ can be further enhanced with epitaxial strain, because of a strain-driven ferroelectric-to-paraelectric transition that originates from the softening of some polar optical modes. Our findings thus point out that NbOI$_{2}$, as well as other niobium oxide dihalides are highly promising for paving the way for potentially efficient nonlinear optical device applications.

Materials Science
Ultrafast Carrier Dynamics in 2D NbTe 2 Films: Implications for Photonic and Optoelectronic Devices

Linnan Jia,Chang-Fu Huo,Xiao-Qing Yan,Jiayang Wu,Yu-Zhe Zhang,Yunyi Yang,Wenxiong Xu,Qiannan Cui,Daohong Song,Baohua Jia,Zhi-Bo Liu,Zhigang Chen,David J. Moss

DOI: https://doi.org/10.1021/acsanm.2c04333

IF: 6.14

2022-12-09

ACS Applied Nano Materials

Abstract:As one of the representatives of emerging metallic transition-metal dichalcogenides, niobium ditelluride (NbTe2) has attracted intensive interest recently due to its distorted lattice structure and unique physical properties. Here, we report on the ultrafast carrier dynamics in NbTe2 measured using time-resolved pump–probe transient reflection spectroscopy. A thickness-dependent carrier relaxation time is observed, exhibiting a clear increase in the fast and slow carrier decay rates for thin NbTe2 flakes. In addition, pump-power-dependent measurements indicate that the carrier relaxation rates are power-independent and the peak amplitude of the transient reflectivity increases linearly with the pump power. The isotropic relaxation dynamics in NbTe2 is also verified by performing polarization-resolved pump–probe measurements. These results provide insight into the light–matter interactions and charge-carrier dynamics in NbTe2 and will pave the way for its applications to photonic and optoelectronic devices.

materials science, multidisciplinary,nanoscience & nanotechnology
Electronic structures and anisotropic carrier mobilities of monolayer ternary metal iodides MLaI5(M=Mg, Ca, Sr, Ba)

Baojuan Xin,Yaoqiao Hu,Maokun Wu,Jintao Cui,Luyan Li,Yahui Cheng,Hui Liu,Feng Lu,Kyeongjae Cho,Wei-Hua Wang

DOI: https://doi.org/10.1088/1361-648X/ac0c3d

2021-07-05

Abstract:Exploiting two-dimensional (2D) materials with natural band gaps and anisotropic quasi-one-dimensional (quasi-1D) carrier transport character is essential in high-performance nanoscale transistors and photodetectors. Herein, the stabilities, electronic structures and carrier mobilities of 2D monolayer ternary metal iodides MLaI5(M = Mg, Ca, Sr, Ba) have been explored by utilizing first-principles calculations combined with numerical calculations. It is found that exfoliating MLaI5monolayers are feasible owing to low cleavage energy of 0.19-0.21 J m-2and MLaI5monolayers are thermodynamically stable based on phonon spectra. MLaI5monolayers are semiconductors with band gaps ranging from 2.08 eV for MgLaI5to 2.51 eV for BaLaI5. The carrier mobility is reasonably examined considering both acoustic deformation potential scattering and polar optical phonon scattering mechanisms. All MLaI5monolayers demonstrate superior anisotropic and quasi-1D carrier transport character due to the striped structures. In particular, the anisotropic ratios of electron and hole mobilities along different directions reach hundreds and tens for MLaI5monolayers, respectively. Thus, the effective electron-hole spatial separation could be actually achieved. Moreover, the absolute locations of band edges of MLaI5monolayers have been aligned. These results would provide fundamental insights for MLaI5monolayers applying in nano-electronic and optoelectronic devices.
Modulation of Carrier Lifetime in MoS2 Monolayer by Uniaxial Strain

Hao Hong,Yang Cheng,Chunchun Wu,Chen Huang,Can Liu,Wentao Yu,Xu Zhou,Chaojie Ma,Jinhuan Wang,Zhihong Zhang,Yun Zhao,Jie Xiong,Kaihui Liu

DOI: https://doi.org/10.1088/1674-1056/ab99ba

2020-01-01

Chinese Physics B

Abstract:Carrier lifetime is one of the most fundamental physical parameters that characterizes the average time of carrier recombination in any material. The control of carrier lifetime is the key to optimizing the device function by tuning the electro–optical conversion quantum yield, carrier diffusion length, carrier collection process, etc. Till now, the prevailing modulation methods are mainly by defect engineering and temperature control, which have limitations in the modulation direction and amplitude of the carrier lifetime. Here, we report an effective modulation on the ultrafast dynamics of photoexcited carriers in two-dimensional (2D) MoS2 monolayer by uniaxial tensile strain. The combination of optical ultrafast pump–probe technique and time-resolved photoluminescence (PL) spectroscopy reveals that the carrier dynamics through Auger scattering, carrier–phonon scattering, and radiative recombination keep immune to the strain. But strikingly, the uniaxial tensile strain weakens the trapping of photoexcited carriers by defects and therefore prolongs the corresponding carrier lifetime up to 440% per percent applied strain. Our results open a new avenue to enlarge the carrier lifetime of 2D MoS2, which will facilitate its applications in high-efficient optoelectronic and photovoltaic devices.
In-plane anisotropic mechanical properties of two-dimensional NbOI2

Yuanyuan Cui,Shuqi Li,Xiangping Zhang,Tingjun wang,Xinyu Cao,Shaohua Yan,Xiao Zhang,Hechang Lei,Gang Tang,Jiawang Hong,Xueyun Wang

DOI: https://doi.org/10.1063/5.0159315

IF: 4

2023-07-31

Applied Physics Letters

Abstract:Two-dimensional niobium oxide diiodide (NbOI2) has recently attracted extensive attention due to its highly anisotropic band structures and rich physical characteristics in electronics and optoelectronics. Nevertheless, mechanical properties of NbOI2 have not been systematically investigated, which are critical parameters for applications. Here, we determine the directional dependence of Young's modulus of thin NbOI2 flakes by using an atomic force microscopy-based nanoindentation technique. We find that Young's moduli along two perpendicular in-plane crystalline axis, the c-axis and the a-axis, were 97.27 ± 2.12 and 51.51 ± 8.21 GPa, respectively. The anisotropic ratio is up to 1.89, which is a high anisotropy value in two-dimensional materials reported so far.

physics, applied
A B 2 N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility

Shuyi Lin,Yu Guo,Meiling Xu,Jijun Zhao,Yiwei Liang,Xuanhao Yuan,Yiming Zhang,Feilong Wang,Jian Hao,Yinwei Li

DOI: https://doi.org/10.1039/d1nr07054a

IF: 6.7

2022-01-01

Nanoscale

Abstract:A planar 2D B 2 N monolayer with a desirable direct band gap, high thermal stability, and high and highly anisotropic carrier mobility is shown to be a promising functional material for nanoelectronics and optoelectronics applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
DFT coupled with NEGF study of structural, electronic and transport properties of two-dimensional InOBr

Ziwei Lin,Ruijuan Guo,Hengze Qu,Yaxin Huang,Lili Xu,Xiang Chen,Xiaoqin Shi,Shengli Zhang

DOI: https://doi.org/10.1016/j.vacuum.2020.109745

IF: 4

2020-12-01

Vacuum

Abstract:As Moore's law is approaching its physical limit, two-dimensional (2D) materials have been expected to be favorable silicon alternatives. Here, the electronic properties and the ballistic quantum transport performances of monolayer InOBr are studied through the density functional theory coupled with nonequilibrium Green function formalism. Monolayer InOBr is a dynamic and thermodynamic stable system and has an indirect bandgap of 3.37 eV at HSE06 level. Interestingly, the ballistic transport simulations show that the monolayer InOBr can effectively suppress the short channel effect at sub-5nm nodes. For high-performance applications, the on-currents of a- and b-directed monolayer InOBr field-effect-transistors (FETs) with 5-nm channel length exceed 3200 μA μm−1 and the sub-threshold swings of about 70 mV/dec. Besides, the 5-nm a-directed FETs can also stratify the low-power applications with the on/off ratio of more than 107. Thus, monolayer InOBr will be an attractive channel material to extend Moore's law to sub-5 nm.

materials science, multidisciplinary,physics, applied
The unique carrier mobility of monolayer Janus MoSSe nanoribbons: a first-principles study

Wen-Jin Yin,Yu Liu,Bo Wen,Xi-Bo Li,Yi-Feng Chai,Xiao-Lin Wei,Shangyi Ma,Gilberto Teobaldi

DOI: https://doi.org/10.1039/d1dt01121a

IF: 4

2021-01-01

Dalton Transactions

Abstract:Charge-carrier mobility is a determining factor of the transport properties of semiconductor materials and is strongly related to the optoelectronic performance of nanoscale devices.

chemistry, inorganic & nuclear
Photocarrier Dynamics in TlGaS 2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS 2 Nanoflakes: Implications for Optoelectronic Applications

Yang Fu,Dawei He,Jiaqi He,Xiuxiu Han,Jinxuan Bai,Yongsheng Wang,Hui Zhao

DOI: https://doi.org/10.1021/acsanm.0c01448

IF: 6.14

2020-08-06

ACS Applied Nano Materials

Abstract:We present an experimental investigation on photocarrier dynamics in a TlGaS2 bulk crystal and its heterostructures with hexagonal BN and WS2. The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS2 crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS2 at room temperature. In the hexagonal-BN-TlGaS2 heterostructure, the photocarrier dynamics was similar to that in TlGaS2, indicating the type-I band alignment of this structure with both band extremes located in TlGaS2. In the monolayer WS2-TlGaS2 heterostructure, we observed charge transfer from TlGaS2 to WS2 and an extended lifetime of the transferred carriers in WS2. These results introduce TlGaS2 as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3

Zhenwei Ou,Bin Peng,Weibin Chu,Zhe Li,Cheng Wang,Yan Zeng,Hongyi Chen,Qiuyu Wang,Guohua Dong,Yongyi Wu,Ruibin Qiu,Li Ma,Lili Zhang,Xiaoze Liu,Tao Li,Ting Yu,Zhongqiang Hu,Ti Wang,Ming Liu,Hongxing Xu

DOI: https://doi.org/10.1002/advs.202301057

IF: 15.1

2023-05-25

Advanced Science

Abstract:The hot carriers generated in BiFeO3 are capable of coupling with phonons and undergo quasi‐ballistic transport over a distance of 340 nm in the first picosecond. Even after undergoing cooling processes, the carrier diffusion coefficient mediated by electron‐phonon coupling remains significantly higher than that of bulk. These findings introduce novel perspectives for the development of efficient electronic devices based on BiFeO3. The electron‐phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high‐efficiency electronic devices. Here, carrier transport behavior mediated by the electron‐phonon coupling in BiFeO3 epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron‐phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi‐ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron‐phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels

Hyeon Han,Quentin Jacquet,Zhen Jiang,Farheen N. Sayed,Arpit Sharma,Aaron M. Schankler,Arvin Kakekhani,Holger L. Meyerheim,Jae-Chun Jeon,Jucheol Park,Sang Yeol Nam,Kent J. Griffith,Laura Simonelli,Andrew M. Rappe,Clare P. Grey,Stuart S. P. Parkin

DOI: https://doi.org/10.1038/s41563-023-01612-2

2023-08-02

Abstract:The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, likely due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration which we show gives rise to a colossal insulator-metal transition where the resistivity drops by eleven orders of magnitude due to the population of the initially empty Nb 4d0 states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, that allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way to the exploration of novel thin films with ionic channels and their potential applications.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Tailoring the Charge Transfer‐Driven Oxidation in van der Waals Ferroelectric NbOI2 Through Hetero‐Interface Engineering

Rui Wang,XiaoJia Yuan,Shui Lin,JiaPeng Wang,Yue Liu,Wen He,WenZhu Shao,ZhaoYuan Sun,YuQiang Fang,Jun Cai,Zhi Liu,Cheng‐Yan Xu,FuQiang Huang,Liang Zhen,ShengLi Zhang,Yang Li

DOI: https://doi.org/10.1002/adfm.202414753

IF: 19

2024-10-22

Advanced Functional Materials

Abstract:This study uncovers the oxidation mechanisms of NbOI2 and its heterostructures, demonstrating tunable oxidation behavior through in situ experiments and first‐principles calculations. Charge transfer at hetero‐interfaces drives continuous oxidation in NbOI2/TMDs and suppresses it in NbOI2/graphene. By linking energy band structures to oxidation behavior, this work offers insights and strategies for enhancing the chemical stability of 2D air‐sensitive materials. 2D transition metal halide oxides (TMHOs) have attracted much interest due to their intriguing ferroelectrics and excellent nonlinear optics, however, their susceptibility to oxidation makes their basic research and practical application a challenge. Therefore, it is crucial to understand the oxidation mechanism and explore effective strategies for protection. Here, taking van der Waals (vdWs) ferroelectric NbOI2 as an example, oxidation mechanisms and tuning the oxidation behaviors of NbOI2 and its heterostructures by a variety of in situ experiments and first‐principles calculations are discovered. The ambient‐pressure X‐ray photoelectron spectra reveal a self‐limiting oxidation in isolated NbOI2, driven by spontaneously formed iodine vacancies that react with oxygen molecules due to their lower formation and adsorption energies. For the heterostructures with a lower Fermi level (such as WSe2) than transition state VI@NbOI2 (NbOI2 rich in I‐vacancies), the charge transfer from NbOI2 to WSe2 drives the continuous and complete oxidation of NbOI2 flakes. Moreover, the heterostructures with a higher Fermi level (such as graphene) than VI@NbOI2 can weaken the oxidation of NbOI2. By linking the energy band structures to oxidation behavior, the work offers a new oxidation mechanism of 2D air‐sensitive materials and a crucial strategy for improving their chemical stability.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Highly anisotropic mechanical and optical properties of 2D NbOX2 (X = Cl, Br, I) revealed by first-principle

Bohayra Mortazavi,Masoud Shahrokhi,Brahmanandam Javvaji,Alexander V Shapeev,Xiaoying Zhuang

DOI: https://doi.org/10.1088/1361-6528/ac622f

IF: 3.5

2022-04-12

Nanotechnology

Abstract:Abstract In the latest experimental success, NbOI 2 two-dimensional (2D) crystals with anisotropic electronic and optical properties have been fabricated ( Adv. Mater. 33 (2021), 2101505). In this work inspired by the aforementioned accomplishment, we conduct first-principles calculations to explore the mechanical, electronic, and optical properties of NbOX 2 (X = Cl, Br, I) nanosheets. We show that individual layers in these systems are weakly bonded, with exfoliation energies of 0.22, 0.23, and 0.24 J m −2 , for the isolation of the NbOCl 2 , NbOBr 2, and NbOI 2 monolayers, respectively, distinctly lower than those of the graphene. The optoelectronic properties of the single-layer, bilayer, and bulk NbOCl 2 , NbOBr 2, and NbOI 2 crystals are investigated via density functional theory calculations with the HSE06 approach. Our results indicate that the layered bulk NbOCl 2 , NbOBr 2, and NbOI 2 crystals are indirect gap semiconductors, with band gaps of 1.79, 1.69, and 1.60 eV, respectively. We found a slight increase in the electronic gap for the monolayer and bilayer systems due to electron confinement at the nanoscale. Our results show that the monolayer and bilayer of these novel 2D compounds show suitable valence and conduction band edge positions for visible-light-driven water splitting reactions. The first absorption peaks of these novel monolayers along the in-plane polarization are located in the visible range of light which can be a promising feature to design advanced nanoelectronics. We found that the studied 2D systems exhibit highly anisotropic mechanical and optical properties. The presented first-principles results provide a comprehensive vision about direction-dependent mechanical and optical properties of NbOX 2 (X = Cl, Br, I) nanosheets.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Exciton-Driven and Layer-Independent Linear and Nonlinear Optical Properties in NbOCl2

Yi-Min Ding,Luo Yan,Yu Wu,Liujiang Zhou

DOI: https://doi.org/10.1021/acs.jpclett.4c01677

2024-07-18

Abstract:We investigate the electronic structure and linear and nonlinear [second-harmonic generation (SHG)] spectra of the NbOCl2 monolayer, bilayer, and bulk by using a real-time first-principles approach based on many-body theory. First, the interlayer couplings between NbOCl2 layers are very weak, due to the relatively large interlayer distance, saturation of the p orbital of Cl atoms, and high degree of localization of charge density around the Nb atom for both the lowest conduction band and the highest valence band. Second, the quasiparticle gaps and exciton binding energy for the three systems show layer-dependent features and decrease with an increase in layer thickness. Most importantly, the linear and SHG spectra of the NbOCl2 monolayer, bilayer, and bulk are dominated by strong excitonic resonances and exhibit layer-independent features due to the weak interlayer couplings. Our findings demonstrate that excitonic effects should be included in studying the optical properties of not only two-dimensional materials but also layered bulk materials with weak interlayer couplings.

Basic principles of electrohaemodynamics.

Enhanced Carrier Lifetime and Mobility in Monolayer NbOI 2

Widely tunable carrier mobility of boron nitride-embedded graphene.

Structural phase transition and electronic properties of two-dimensional

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Promoting the carrier mobility of Nb2SiTe4 through cation coordination engineering

Carrier Mobility in Monolayer IrSCl and IrSI Based on First-Principles Calculations

Giant electro-optic and elasto-optic effects in ferroelectric NbOI$_{2}$

Ultrafast Carrier Dynamics in 2D NbTe 2 Films: Implications for Photonic and Optoelectronic Devices

Electronic structures and anisotropic carrier mobilities of monolayer ternary metal iodides MLaI5(M=Mg, Ca, Sr, Ba)

Modulation of Carrier Lifetime in MoS2 Monolayer by Uniaxial Strain

In-plane anisotropic mechanical properties of two-dimensional NbOI2

A B 2 N monolayer: a direct band gap semiconductor with high and highly anisotropic carrier mobility

DFT coupled with NEGF study of structural, electronic and transport properties of two-dimensional InOBr

The unique carrier mobility of monolayer Janus MoSSe nanoribbons: a first-principles study

Photocarrier Dynamics in TlGaS 2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS 2 Nanoflakes: Implications for Optoelectronic Applications

Strong Electron‐Phonon Coupling Mediates Carrier Transport in BiFeO3

Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels

Tailoring the Charge Transfer‐Driven Oxidation in van der Waals Ferroelectric NbOI2 Through Hetero‐Interface Engineering

Highly anisotropic mechanical and optical properties of 2D NbOX2 (X = Cl, Br, I) revealed by first-principle

Exciton-Driven and Layer-Independent Linear and Nonlinear Optical Properties in NbOCl2