Abstract:Van der Waals (vdW) heterostructures is a rapidly emerging field that promises to produce ondemand properties for novel optoelectronic devices. Assembly of dissimilar two-dimensional atomic crystals in the vdW heterostructure enables unique features and properties which are fundamentally different from individual 2-dimensional (2D) crystals. Currently, most growth and fabrication methods prohibit large scale, micron-thick and robust heterostructures. An alternative approach is the one based on liquid phase exfoliation allowing the possibility of scalable thin films and composites. Such thin films have inherent and predicted advantages: they can display new behaviors due to their extremely high surface area and, as free-standing laminates, can be manipulated with mixing of nanosheets and other materials for novel device attributes. We use the aforementioned route to prepare spray-coated and few microns thick WS2 and hBN/WS2 heterostructure laminates. A combination of photoluminescence and transmission electron microscope measurements show that, despite the disordered layer stacking inherent to the fabrication process, the laminates preserve the few layer optical response. In particular, the hBN/WS2 heterostructure laminates exhibit a 3-layer average distribution. Using optical pumpterahertz probe (OPTP) measurement to access the photocarrier dynamics and photoconductivity, we study and compare the photocarrier dynamics and photoconductivity of pure WS2 and hBN/WS2 samples. The hBN/WS2 samples show an unusual response that is different from what has been previously reported for pure transition metal dichalcogenides. After photoexcitation, instead of a monotonic decay as in pure WS2, an initial fast decay is followed by a rise of the negative differential terahertz (THz) transmission dominating the dynamics for the following 50 ps. By analyzing the time resolved THz complex photoconductivity, we attribute this effect to the presence of free carriers as well as dipoles at the hBN/WS2 interfaces. As previously reported in hBN/Graphene heterostructures, interfacial dipoles can form along with free carriers at the instant of photoexcitation. Whereas free carriers cause a decrease in the transient THz transmission due to Coulomb screening, dipoles can provide an increase in the pump-induced change in transmission. In terms of complex photoconductivity, free carriers have both real and imaginary components while dipoles probed off-resonance provide almost a purely imaginary response. Our results provide a deeper understanding of the photoconductive response of large van der Waals heterostructure laminates fabricated by liquid phase exfoliation, and will enable their use in future optoelectronic applications.

Photocarrier Dynamics in TlGaS 2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS 2 Nanoflakes: Implications for Optoelectronic Applications

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Electrically-tunable non-radiative lifetime in WS2/WSe2 heterostructure

Electrically Tunable Non-Radiative Lifetime in WS2/WSe2 Heterostructures

Terahertz Photoconductivity and Photocarrier Dynamics in Few-Layer Hbn/ws2 Van Der Waals Heterostructure Laminates

Switching of K-Q Intervalley Trions Fine Structure and Their Dynamics in N-Doped Monolayer WS2

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Charge dynamics in the 2D/3D semiconductor heterostructure WSe2/GaAs

Enhancement of the Monolayer WS2 Exciton Photoluminescence with a 2D-Material/Air/GaP In-Plane Microcavity

Hot Carrier Cooling and Trapping in Atomically Thin WS2 Probed by Three-Pulse Femtosecond Spectroscopy

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6 Se 1.4 .

Interfacial bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots

Probing the interlayer excitation dynamics in WS2/WSe2 heterostructures with broadly tunable pump and probe energies

Monolayer WS 2 Lateral Homosuperlattices with Two-dimensional Periodic Localized Photoluminescence

Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility.

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

Photoluminescence Enhancement and Carrier Dynamics of Charged Biexciton in Monolayer WS2 Coupled with Plasmonic Nanocavity

Charge dynamics in the 2D/3D semiconductor heterostructure WSe$_2$/GaAs