Abstract:Metal-insulator transition materials such as NbO2 have generated much excitement in recent years for their potential applications in computing and sensing. NbO2 has generated considerable debate over the nature of the phase transition, and the values for the band gap/band widths in the insulating phase. We present a combined theoretical and experimental study of the band gap and electronic structure of the insulating phase of NbO2. We carry out ab-initio density functional theory plus U calculations, directly determining U and J parameters for both the Nb 4d and O 2p subspaces through the recently introduced minimum-tracking linear response method. We find a fundamental bulk band gap of 0.80 eV for the full DFT+U+J theory. We also perform calculations and measurements for a (100) oriented thin film. Scanning tunnelling spectroscopy measurements show that the surface band gap varies from 0.75 eV to 1.35 eV due to an excess of oxygen in and near the surface region of the film. Slab calculations indicate metallicity localised at the surface region caused by an energy level shift consistent with a reduction in Coulomb repulsion. We demonstrate that this effect in combination with the simple, low cost DFT+U+J method can account for the band widths and p-d gap observed in X-ray photoelectron spectroscopy experiments. Overall, our results indicate the possible presence of a 2D anisotropic metallic layer at the (100) surface of NbO2.

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the inconsistency between theory and experiment regarding the electronic structure of niobium oxide (NbO₂) in the insulating phase and its band - gap value. Specifically, NbO₂ has potential application value in fields such as computing and sensing due to its metal - insulator transition (MIT) characteristics, but there are large differences between the theoretical prediction and experimental measurement of the band - gap width and electronic structure in its insulating phase. These differences are mainly reflected in the following aspects: 1. **Inconsistency of band - gap values**: The band - gap values obtained from theoretical calculations range from 0.058 eV to 1.48 eV, while the experimentally measured band - gap values vary from 0.7 eV to 1.23 eV. This difference poses challenges to the understanding and application of the properties of NbO₂ materials. 2. **Inconsistency of electronic structure**: In addition to the band - gap values, there are also significant differences between theory and experiment in the bandwidths of Nb 4d orbitals and O 2p orbitals as well as the p - d gap. These differences affect the accurate description of the electronic properties of the material. To bridge these gaps, the authors carried out the following work: - **Theoretical calculation**: Using the density functional theory plus Hubbard U and Hund's J (DFT + U+J) method, the U and J parameters of the Nb 4d and O 2p sub - spaces were determined by the minimum - tracking linear response method. This method can more accurately describe the exchange and correlation effects between electrons. - **Experimental verification**: Through scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) techniques, the local band - gap on the surface of (100) - oriented NbO₂ thin films was measured, and it was found that due to the increase in oxygen content in the surface area, the surface band - gap varies between 0.75 eV and 1.35 eV. - **Surface effect analysis**: Through X - ray photoelectron spectroscopy (XPS) experiments, the influence of surface oxygen atoms on the electronic structure was studied, and it was found that the presence of surface oxygen atoms leads to the localization of metallic behavior, which explains the changes in bandwidth and p - d gap observed in the experiments. In summary, the main objective of this paper is to solve the problem of the inconsistency between theory and experiment regarding the electronic structure and band - gap value of NbO₂ in the insulating phase by combining theoretical calculation and experimental verification, thereby providing a more accurate basis for understanding its physical properties and potential applications.

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