Thermoelectric Performance of n-type Bi2S3-alloyed Bi2Te2.7Se0.3

Raphael Fortulan,Adam Brown,Illia Serhiienko,Takao Mori,Sima Aminorroya Yamini
DOI: https://doi.org/10.26434/chemrxiv-2024-977k6
2024-03-21
Abstract:The effect of isovalent sulphur substitution on the thermoelectric properties of n-type Bi2Te2.7Se0.3 alloy has been studied systematically. At low sulphur concentrations, where the samples are single phase, changes in defect chemistry and density of states impacted significantly on electrical resistivity and thermopower, improving thermopower while reducing thermal conductivity due to increased phonon scattering at defects. This reduction in thermal conductivity was particularly noticeable in samples containing Bi2S3-based secondary phase. The thermopower of these samples improved greatly due to the formation of an impurity band at the interface of two phases, resulting in increased electron donation and reduced electrical resistivity. Isovalent sulphur substitution enhanced thermopower and reduced thermal conductivity for both single and multiphase samples.
Chemistry
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore how to optimize the thermoelectric properties of Bi - Te - based materials through sulfur doping by studying the influence of sulfur isovalent substitution on the thermoelectric properties of n - type Bi₂Te₂.₇Se₀.₃ alloy. Specifically, the paper focuses on the following aspects: 1. **Single - phase samples at low sulfur concentrations**: Study how the addition of sulfur changes the defect chemistry and density of states of the samples at low sulfur concentrations, thereby affecting the electrical conductivity and thermoelectric potential. The paper points out that in these samples, the addition of sulfur significantly increases the thermoelectric potential, and at the same time reduces the thermal conductivity due to the increased phonon scattering at the defects. 2. **Multiphase samples at high sulfur concentrations**: When the sulfur concentration exceeds 25%, a second phase based on Bi₂S₃ is formed in the samples. The paper explores the influence of this second phase on the thermoelectric properties, especially how it increases electron donation by forming an impurity band at the interface between the two phases, thereby reducing the electrical conductivity and significantly increasing the thermoelectric potential. 3. **Mechanism for reducing thermal conductivity**: The paper analyzes in detail how the second phase significantly reduces the thermal conductivity, even approaching the theoretical minimum, by introducing multi - scale phonon scattering. This is mainly attributed to the enhanced phonon scattering at the interface. 4. **Optimization of comprehensive performance**: The paper shows through experimental data how sulfur doping and the formation of the second phase simultaneously increase the thermoelectric potential and reduce the thermal conductivity in single - phase and multiphase samples, thereby optimizing the thermoelectric performance. Among them, the sample containing 20% sulfur reaches the highest figure - of - merit coefficient zT of about 0.55. In general, this paper aims to reveal the mechanisms of sulfur doping and second - phase formation by systematically studying the influence of sulfur doping on the thermoelectric properties of Bi₂Te₂.₇Se₀.₃ alloy, and to provide new strategies and insights for designing high - performance n - type Bi - Te - based thermoelectric materials.