Thermoelectric Properties of Single-Phase n-Type Bi 14 Te 13 S 8

Raphael Fortulan,Sima Aminorroaya Yamini,Azib Juri,Illia Serhiienko,Takao Mori
DOI: https://doi.org/10.1021/acsaelm.3c01615
IF: 4.494
2024-02-14
ACS Applied Electronic Materials
Abstract:Bismuth telluride (Bi2Te3) and its alloys are among the best thermoelectric materials at room temperature. Bi14Te13S8, a material with a similar crystal structure, contains sulfur that can potentially improve the thermoelectric performance through widening the band gap and reducing the lattice thermal conductivity. This compound forms in sulfur-added Bi2Te3 alloys. Here, a polycrystalline iodine-doped Bi14Te13S8 sample is investigated; an optimum iodine concentration of 1 at. % resulted in the power factor of 3.5 mW2·m–1·K–1 at room temperature. Iodine doping reduced the lattice thermal conductivity by more than 30% by enhancing the phonon scattering. An improved thermoelectric figure of merit zT of ∼0.29 at 520 K was obtained for 1–1.5 at. % iodine-doped Bi14Te13S8. First-principles calculations indicate that Bi14Te13S8 has a larger band gap compared to bismuth telluride, which allows for a reduction in the bipolar effect; however, a lower effective mass reduced the thermopower for a similar carrier concentration. This study demonstrates that tuned iodine doping can effectively optimize the thermoelectric performance of Bi14Te13S8, highlighting its contribution in multiphase sulfur-alloyed Bi2Te3-based materials.
materials science, multidisciplinary,engineering, electrical & electronic
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