The Band Structure of Zn-Doped Β-Ga2o3 Micro-Spindles and Effect of Zn Doping on the Concentration of Oxygen Vacancy

Shuting Cui,Yong Du,Guoping Li,Qiyong Chen,Ning Tang,Weikun Ge,Lili Xi,Li‐Juan Zhao,Bo Shen

DOI: https://doi.org/10.2139/ssrn.4669408

2023-01-01

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Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Jianguo Lü,Jielin Dai,Jianbo Zhu,Xueping Song,Zhaoqi Sun

DOI: https://doi.org/10.1007/s11595-011-0160-1

2011-01-01

Journal of Wuhan University of Technology-Mater Sci Ed

Abstract:Na-doped ZnO thin films were deposited on the glass substrates using sol-gel method. The effect of Na concentrations on the structural and optical properties of ZnO films was studied. As Na concentration increases from 0.0 at% to 16.0 at%, preferential c-axis orientation becomes more and more obvious, and the intensity of the diffraction peaks from (103) increases. The optical band gap E g value increases from 3.261 to 3.286 eV first and then decreases as Na concentration increases from 0.0 to 2.0 at% and then beyond 2.0 at%. The intensity of all the emissions increases with increasing Na concentration and the origins of the violet emission (wavelength in the 400–407 nm) and the blue emission (wavelength at 473 nm) were discussed in detail.
Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

HUANG Kai,LV Jian-guo,LIU Xian-song,TANG Zhen

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2010.05.039

2010-01-01

Abstract:Mg-doped ZnO thin films were prepared by sol-gel method on Si(111) and quartz glass substrates.The microstructure,morphology,and photoluminescence of the Mg-doped ZnO thin films were studied by X-ray diffraction,atomic force microscopy,scanning electron microscopy,and fluorescence spectrophotometer.The results indicated that the Mg-doped ZnO thin films are polycrystalline with hexagonal wurtzite structure and a higher preferential c-axis orientation.As the annealing temperature increasing,the lattice constant cdecreases from 0.5288 nm to 0.5278 nm,the root mean square increases from 3.8 nm to 6.5 nm,and the band gap increases from 3.26 eV to 3.31 eV.
Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Jianguo Lv,Jiayuan Xu,Min Zhao,Yue Sun,Yaoyao Jiang,Gang He,Miao Zhang,Zhaoqi Sun

DOI: https://doi.org/10.1007/s10854-015-4256-9

2015-01-01

Abstract:Na x Cu y Zn 1− x − y O thin films were prepared by sol–gel method on quartz glass. The effect of Na (or Cu) doping on the microstructure, surface morphology, optical properties of the thin films was investigated. The Na 0.1 Cu 0.01 Zn 0.89 O thin film has the largest average grain size and the best preferential c -axis orientation, which may be attributed to the difference in ionic radius between Zn and Na (or Cu). The Na 0.1 Cu 0.01 Zn 0.89 O thin film also presents denser morphology with little voids and the smallest optical band gap, which may be attributed to band edge bending and the larger grain size. The largest intensity of A 1 (LO) modes may be due to the major structural defect concentrations. The quenching of UV and visible emissions, which may be attributed to the increase of non-radiative recombination transition, has been observed in the Na 0.1 Cu 0.01 Zn 0.89 O and Na 0.1 Cu 0.02 Zn 0.88 O thin films.
Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Kai Huang,Zhen Tang,Li Zhang,Jiangyin Yu,Jianguo Lv,Xiansong Liu,Feng Liu

DOI: https://doi.org/10.1016/j.apsusc.2011.12.011

IF: 6.7

2012-01-01

Applied Surface Science

Abstract:Undoped and Mg-doped ZnO thin films were deposited on Si(1 0 0) and quartz substrates by the sol-gel method. The thin films were annealed at 873 K for 60 min. Microstructure, surface topography and optical properties of the thin films have been measured by X-ray diffraction (XRD), atomic force microscope (AFM), UV-vis spectrophotometer, and fluorophotometer (FL), respectively. The XRD results show that the polycrystalline with hexagonal wurtzite structure are observed for the ZnO thin film with Mg:Zn = 0.0, 0.02, and 0.04, while a secondary phase of MgO is evolved for the thin film with Mg: Zn = 0.08. The ZnO: Mg-2% thin film exhibits high c-axis preferred orientation. AFM studies reveal that rms roughness of the thin films changes from 7.89 nm to 16.9 nm with increasing Mg concentrations. PL spectra show that the UV-violet emission band around 386-402 nm and the blue emission peak about 460 nm are observed. The optical band gap calculated from absorption spectra and the resistivity of the ZnO thin films increase with increasing Mg concentration. In addition, the effects of Mg concentrations on microstructure, surface topography, PL spectra and electrical properties are discussed. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.
Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Jianguo Lv,Changlong Liu,Wanbing Gong,Zhenfa Zi,Xiaoshuang Chen,Kai Huang,Tao Wang,Gang He,Xueping Song,Zhaoqi Sun

DOI: https://doi.org/10.1016/j.spmi.2012.02.014

IF: 3.22

2012-01-01

Superlattices and Microstructures

Abstract:Zinc oxide thin films were deposited on silicon substrates via hydrothermal method. Microstructures, surface topographies and optical properties of ZnO thin films were systematically investigated by X-ray diffraction, atomic force microscopy and fluorescence spectrophotometer. The mean grain size and surface roughness of the thin films decrease first and then increase with increasing the concentration of zinc nitrate hexahydrate. The photoluminescence spectra of ZnO thin films, excited by the 240, 320, 360, 380 and 400 nm excitation wavelength, were investigated in detail. Based on our analysis, it can be noted that mechanisms of the ultraviolet, violet and blue emissions are attributed to the transitions from the localized levels below the conduction band, zinc vacancy, interstitial zinc and extended interstitial zinc levels to the valance band, respectively. Blue-violet emissions of ZnO have great potential in light emitting and biological fluorescence labeling applications. (c) 2012 Elsevier Ltd. All rights reserved.
Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

LV Jian-guo,CHEN Xue-mei,ZHU Jian-bo,HUANG Kai,SONG Xue-ping,SUN Zhao-qi

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2010.06.041

2010-01-01

Abstract:ZnO thin films with different Na doping content were prepared by sol-gel method.The effects of Na doping content on morphology and optical properties of ZnO thin films were investigated by XRD,Raman spectrometer,AFM,SEM,and UV-vis spectrophotometer,respectively.XRD and Raman spectra analysis indicate that the 8.0 at% Na-doped ZnO thin film has the optimal preferential c-axis orientation and the maximum residual tensile stress.AFM and SEM images show that mean particles diameter and roughness of the thin films increased as the Na doping content increasing.The average optical transparency of the thin films was higher than 80% in the visible range.Optical band gap of the thin films increases from 3.283 eV to 3.305 eV as the Na doping content increased from 0 to 10at%.
Self-trapped Holes, Oxygen Vacancies and Electrocatalytic Performance of Zn-doped Β-Ga2o3 Microspindles

Shuting Cui,Yuchao Du,Guoping Li,Qiyong Chen,Ning Tang,Weikun Ge,Lili Xi,Bo Shen,Lijuan Zhao

DOI: https://doi.org/10.1039/d4ce00296b

IF: 3.756

2024-01-01

CrystEngComm

Abstract:Gallium oxide (beta-Ga2O3) is a well-known extra-wide bandgap semiconductor and one of the promising materials used for power photoelectric devices, gas sensors, catalytic agents, etc. This work presents the suppression of self-trapped holes (STHs) and increase of oxygen vacancies (V-O) in beta-Ga2O3 microspindles by doping of Zn ions as well as the electrocatalytic activity of these microspindles. Undoped and Zn-doped beta-Ga2O3 microspindles were prepared by a hydrothermal method followed by high-temperature calcination. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) results show that the morphology and structure of the samples did not change after low dose of Zn doping. The analyses of temperature-dependent photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS) indicate that incorporation of divalent Zn ions as deep acceptors can increase V-O concentration and effectively suppress the formation of STHs. Enhanced electrocatalytic activity was observed in Zn-doped beta-Ga2O3 microspindles compared with undoped beta-Ga2O3 microspindles. The new active sites introduced by Zn doping, higher V-O concentration, and suppressed STHs are believed to be responsible for the enhanced electrocatalytic performance of Zn-doped beta-Ga2O3 microspindles. This work is expected to expand the application of beta-Ga2O3 based microstructures in electrocatalysis and provide innovative ideas for energy and environmental issues.
Microstructure and Electrical Properties of Al-doped ZnO Thin Films

YU Ping,QIU Dong-jiang,FAN Rui-xin,SHI Hong-jun,WU Hui-zhen

DOI: https://doi.org/10.3785/j.issn.1008-973x.2006.11.008

2006-01-01

Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).
The Optical Band-Gap Changing Of Cu Doped Zno Nanostructured Film

Shifeng Zhao,Qiliang Lu,Changhui Xu,Yuewen Mu,Jianguo Wan,Fengqi Song,Guanghou Wang

DOI: https://doi.org/10.1109/cleopr.2009.5292466

2009-01-01

Abstract:Cu-doped ZnO nanostructured films have been prepared by wet chemical method. The optical band-gap changes with the increase of Cu doped concentration, which is attributed to the increase of oxygen vacancy concentration by laser-raman spectroscopy.
Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Shen Qing-He,Gao Zhi-Wei,Ding Huai-Yi,Zhang Guang-Hui,Pan Nan,Wang Xiao-Ping

DOI: https://doi.org/10.7498/aps.61.167105

IF: 0.906

2012-01-01

Acta Physica Sinica

Abstract:Ga-doped ZnO nanostructures with various doping concentrations are prepared by using carbon thermal reduction reaction and in situ doping method. X-ray diffraction measurement reveals only wurzite structures existing in Ga-doped ZnO nanostructures. Scaning electron microscopy observations show that with the increase of Ga doping concentration, the morphology of ZnO nanstrucuture varies gradually from nanorods to nanocones. From the photoluminescence, we find that the visible light emission of ZnO nanostructures can be suppressed obviously and even disappears with the increase of Ga doping concentration. Moreover, the suppression of visible light emission is correlated well with the behavior, and X-ray photoelectron spectroscopy measurement reveals that the vacancy oxygen in ZnO nanostructure decreases drastically with the increase of Ga doping concentration. This result offers a new strong evidence for the mechanism that the visible light emission of ZnO nanostructures is caused by the oxygen vacancy defects. This work also demonstrates that a little Ga incorporation into ZnO nanostructures can effectively reduce the oxygen vacancy defects occurring.
Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Lu Zhong-Lin,Zou Wen-Qin,Xu Ming-Xiang,Zhang Feng-Ming,Du You-Wei

DOI: https://doi.org/10.1088/0256-307x/26/11/116102

2009-01-01

Abstract:High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on alpha-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 x 10(-4) Omega.cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.
Fermi-Level Band Filling and Band-Gap Renormalization in Ga-Doped Zno

JD Ye,SL Gu,SM Zhu,SM Liu,YD Zheng,R Zhang,Y Shi

DOI: https://doi.org/10.1063/1.1928322

IF: 4

2005-01-01

Applied Physics Letters

Abstract:The fundamental optical properties of Ga-doped ZnO films grown by metalorganic chemical vapor deposition were investigated by room-temperature transmittance and photoluminescence (PL) spectroscopy. The Burstein–Moss (BM) shift of the absorption edge energy is observed at the carrier concentration up to 2.47×1019cm−3. The absorption edges are fitted to a comprehensive model based on the electronic energy-band structure near critical points plus relevant discrete and continuum excitonic effects, taking account of the Fermi-level filling factor. The theoretical calculation for BM effect is in good agreement with the experimental facts, considering the nonparabolic nature of conduction-band and band-gap renormalization (BGR) effects. Meanwhile, the monotonic redshift of the near-band-gap emission detected by PL measurements has also been observed with increasing free-carrier concentration, which is attributed to the BGR effects, and can be fitted by an n1∕3 power law with a BGR coefficient of 1.3×10−5meVcm.
Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

Y. S. Zou,H. Yang,H. P. Wang,D. Lou,C. J. Tu,Y. C. Zhang

DOI: https://doi.org/10.1016/j.physb.2012.12.043

2013-01-01

Abstract:Ga-doped zinc oxide (GZO) films were prepared on Si(100) and fused silica substrates by pulsed laser deposition (PLD). The influence of gallium doping on the morphology, microstructure, optical and photoluminescence properties of GZO films were investigated by scanning electron microscopy, atomic force microscopy, X-ray diffraction, UV–visible spectrophotometer and photoluminescence spectra. It was found that the Ga doping concentration altered the microstructure and crystallite size of GZO films. X-ray diffraction study revealed that the undoped ZnO and GZO films exhibited a preferred orientation along the (002) plane and the Ga atoms doped into ZnO film deteriorated the film crystallinity. The Ga doping resulted in the decrease of surface roughness and crystallite size of GZO films, the increase in transmittance in the visible region and the increase of optical energy gap of the GZO films. The room-temperature photoluminescence spectra demonstrated that the films exhibited near-band-edge (NBE) emission, while deep-level (DL) emission was also observed in the GZO films deposited at Ga concentrations over 2at%. The intensity ratio of NBE-to-DL emission in the PL spectra of the GZO films was strongly dependent on the Ga concentrations.
The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Jing Luo,Hongyu Liu,Weijie Deng,Rengang Zhang,Chen He

DOI: https://doi.org/10.1007/s10854-024-12520-9

2024-04-12

Journal of Materials Science Materials in Electronics

Abstract:In order to gain a deeper understanding of the relationship between defects and luminescent properties in thin films, ZnO films containing 0 to 8 at % Mg were prepared on amorphous quartz substrates by room temperature radio-frequency (RF) magnetron sputtering, followed by annealing in air at 400 °C. X-ray diffraction (XRD) results indicate that the ZnMgO film is a solid solution with a hexagonal close-packed wurtzite structure and preferential c-axis growth direction. With the increase in Mg concentration, the intensity of the (002) diffraction peak gradually decreases. Field emission scanning electron microscopy (FESEM) observations reveal a transition in surface particle shapes from approximately circular to a mixture of circular and irregular polygonal shapes. The optical bandgap (Eg), obtained from optical transmittance measured using a UV–visible spectrophotometer, decreases first and then increases with increasing Mg concentration. Photoluminescence (PL) spectra show a strong violet peak and a weak near-infrared (NIR) peak. Gaussian fitting of the two peaks reveals that the violet peak mainly originates from the radiative recombination of electrons bound to shallow donor interstitial zinc (Zn i ) with holes in the valence band. The NIR peak primarily arises from the radiative recombination of electrons captured by shallow donor interstitial zinc (Zn i) with holes captured by deep-level acceptor interstitial oxygen (O i ).

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of [math]-Ga2O3

Ding-Du Chen,Shu-Min Wen,Xin-Ya Yang,Xia Liu,Er-Jun Zhao,Chun Ying

DOI: https://doi.org/10.1142/s0217984924501999

2024-02-09

Modern Physics Letters B

Abstract:Modern Physics Letters B, Ahead of Print. In this work, the electronic structure and optical properties of Zr-doped [math]-Ga2O3 with interstitial H and O vacancies were studied by using first-principles generalized gradient approximation combined with the Hubbard U method based on density functional theory. The energy band structure, density of states, absorption spectrum, effective mass, mobility and conductivity of the doped system were calculated and analyzed. Results showed that the doped system was more stable under the Ga-rich condition than under the O-rich condition. With the increase in Zr doping concentration, the bandgap of the [math]-Ga2O3 system gradually narrowed and the absorption spectrum of the system blue-shifted in the wavelength range of 162–275[math]nm. System conductivity was enhanced by Zr doping, decreased by O vacancies and greatly improved by interstitial H. Therefore, doping Zr into the [math]-Ga2O3 system is important for improving material properties and preparing electronic and optical devices.

physics, condensed matter, applied, mathematical
The interaction between oxygen vacancies and doping atoms in ZnO

Xiaodong Si,Yongsheng Liu,Xinfang Wu,Wei Lei,Juan Xu,Wenlong Du,Tao Zhou,Jia Lin

DOI: https://doi.org/10.1016/j.matdes.2015.08.027

2015-12-01

Abstract:Three different kinds of typical p-type impurities, (Ag, N and K) ZnO crystals, with and without oxygen vacancy are studied, respectively. The lattice structure, band structure, density of state and formation energy of oxygen vacancies were calculated on intrinsic crystal and defect crystal with oxygen vacancies. The calculation results reveal that lattice constant and unit cell volume increased in accepter doped cells. The formation energy of oxygen vacancies is lowest in K-doped cells, and the Ag-doped one has the highest hole conductivity. It is easier for K-doped to form oxygen vacancies. Finally, effects of oxygen vacancies to the conductivity of three doped systems were studied.

materials science, multidisciplinary
Microstructure and photoluminescence study of vanadium-doped ZnO films

J T Luo,X Y Zhu,B Fan,F Zeng,F Pan

DOI: https://doi.org/10.1088/0022-3727/42/11/115109

2009-01-01

Abstract:Zn1-xVxO films (x = 0, 1.3, 1.9, 2.6, 3.5, 4.3 and 6.2 at%) were prepared on glass substrates via the direct current reactive magnetron co-sputtering method. The microstructure, band gap, photoluminescence and Raman scattering of these films have been systematically investigated. The structural and chemical state characterizations indicate that the crystallinity of Zn1-xVxO films (x <= 2.6 at%) can be improved by V incorporation into the ZnO wurtzite lattice, but excess V will precipitate as V clusters when x >= 4.3 at%, resulting in the deterioration of crystal quality. The defects in Zn1-xVxO films (x <= 2.6 at%) can be suppressed by V doping, which induces the enhancement of the near band edge (NBE) emission. However, when x >= 4.3 at%, defects adjacent to the V dopant quench the NBE emission. On the other hand, the band gap of the films gradually increases with the increase in V concentration, which is accompanied by the blue shift of the NBE emission.
Effect of Zinc Doping on the Microstructure in YBCO

A Li,XN Ying,YB Qi,XS Xu,ZH Bao,QM Zhang,YP Zhu,YN Wang

DOI: https://doi.org/10.1016/s0921-4534(00)00642-0

2000-01-01

Abstract:XRD experiment was conducted on zinc substituted YBCO ceramics in the temperature range 90–270K. In undoped or lightly doped samples, the abrupt change of lattice parameter at several temperatures and the large average temperature derivative of lattice parameter, originating from both thermal expansion and subtle changes of lattice parameter, give evidences for the onset and development of CuO5 tilting upon cooling. Such titling was suppressed by zinc doping and this effect is discussed in favor of the strong and expanded nature of the disturbance on electronic states created by Zn that is essential for tilting mechanism of CuO5 pyramids.
Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

Hui Zeng,Meng Wu,Meijuan Cheng,Qiubao Lin,Meijuan Chen

DOI: https://doi.org/10.3390/ma16155317

IF: 3.4

2023-07-29

Materials

Abstract:The intrinsic n-type conduction in Gallium oxides (Ga2O3) seriously hinders its potential optoelectronic applications. Pursuing p-type conductivity is of longstanding research interest for Ga2O3, where the Cu- and Zn-dopants serve as promising candidates in monoclinic β-Ga2O3. However, the theoretical band structure calculations of Cu- and Zn-doped in the allotrope α-Ga2O3 phase are rare, which is of focus in the present study based on first-principles density functional theory calculations with the Perdew–Burke–Ernzerhof functional under the generalized gradient approximation. Our results unfold the predominant Cu1+ and Zn2+ oxidation states as well as the type and locations of impurity bands that promote the p-type conductivity therein. Furthermore, the optical calculations of absorption coefficients demonstrate that foreign Cu and Zn dopants induce the migration of ultraviolet light to the visible–infrared region, which can be associated with the induced impurity 3d orbitals of Cu- and Zn-doped α-Ga2O3 near the Fermi level observed from electronic structure. Our work may provide theoretical guidance for designing p-type conductivity and innovative α-Ga2O3-based optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Band structure regulation in Fe-doped MgZnO by initial magnetic moments

Licheng Zheng,Qi Yao,Hao Wang,Huahan Zhan,Wenwei Cai,Yinghui Zhou,Junyong Kang

DOI: https://doi.org/10.1039/d0ra09306h

IF: 4.036

2021-01-01

RSC Advances

Abstract:The optoelectronic and magnetic properties of Fe-doped MgZnO are regulated by the Fe dopant and its initial magnetic moments.

chemistry, multidisciplinary

The Band Structure of Zn-Doped Β-Ga2o3 Micro-Spindles and Effect of Zn Doping on the Concentration of Oxygen Vacancy

Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Self-trapped Holes, Oxygen Vacancies and Electrocatalytic Performance of Zn-doped Β-Ga2o3 Microspindles

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

The Optical Band-Gap Changing Of Cu Doped Zno Nanostructured Film

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Fermi-Level Band Filling and Band-Gap Renormalization in Ga-Doped Zno

Microstructure, Optical and Photoluminescence Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of [math]-Ga2O3

The interaction between oxygen vacancies and doping atoms in ZnO

Microstructure and photoluminescence study of vanadium-doped ZnO films

Effect of Zinc Doping on the Microstructure in YBCO

Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga2O3: First-Principles Calculations

Band structure regulation in Fe-doped MgZnO by initial magnetic moments